T-Shaped Conductive Plug for Semiconductor Assembly Delamination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges with delamination of bumps from conductive pads due to reduced contact area, affecting electrical performance and reliability as feature sizes decrease, leading to increased difficulty in bonding bumps on conductive plugs.
Innovation Solution
A semiconductor assembly with a T-shaped conductive plug and protective/isolation liners is manufactured, where the conductive plug has a first block in the passivation layer and a second block connecting to the conductive pad, surrounded by protective and isolation liners, and a diffusion barrier film, increasing the contact area and adhesion strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size is reduced to increase integration density, then more components can be integrated into a given chip area, but the contact area between conductive pads and bumps decreases leading to delamination
Solution Approach 1:
The conductive plug transitions from a conventional planar structure to a T-shaped three-dimensional structure. The first block has a larger footprint area than the second block, creating a T-shaped configuration when viewed from above. This dimensional change increases the bonding interface area without increasing the vertical height, thereby improving bonding reliability while maintaining the reduced feature size for high integration density.
Solution Approach 2:
The conductive plug is formed as a composite structure with two blocks of conductive material having different cross-sectional areas. The first block has a larger footprint area providing enhanced bonding surface, while the second block has a smaller area for precise alignment with the conductive pad. This composite configuration optimizes both bonding reliability and electrical connection.
2Productivity
If feature size is reduced to increase integration density, then more components can be integrated into a given chip area, but the contact area between conductive pads and bumps decreases
Solution Approach 1:
The conductive plug adopts a T-shaped three-dimensional structure where the first block provides a larger footprint area for bonding. This vertical stacking approach increases the effective contact area without expanding the lateral footprint, enabling maintained bonding area despite reduced feature sizes required for high integration density.
3Ease of manufacture
If conventional conductive plug structure is used, then manufacturing process is simple, but bonding of bumps is difficult and delamination occurs
Solution Approach 1:
The conductive plug is segmented into two distinct blocks: a first block with larger footprint area for bonding and a second block with smaller area for electrical connection. This segmentation allows each block to perform its specific function optimally, improving bonding reliability while the entire structure can be formed through standard semiconductor fabrication processes.
Solution Approach 2:
The conductive plug structure changes the geometric parameters of the bonding interface by creating a T-shaped configuration with varying cross-sectional areas. The first block has a larger footprint area parameter optimized for bonding, while the second block has a smaller area parameter optimized for electrical connection, improving overall bonding reliability without complicating the manufacturing process.
Data Source
AI summary
The present disclosure provides a semiconductor assembly and method of manufacturing the same. The semiconductor assembly includes a semiconductor device, a bulk semiconductor, a passivation layer, at least one conductive plug, a plurality of protective liners, and a plurality of isolation liners. The bulk semiconductor is disposed over the semiconductor device. The passivation layer covers the bulk semiconductor. The conductive plug comprises a first block disposed in the passivation layer and a second block disposed between the first block and the conductive pad, wherein portions of peripheries of the first and second blocks of the conductive plug are surrounded by the protective liners and the isolation liners.


