T-Shaped Conductive Plug for Semiconductor Assembly Delamination

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Solution Overview

Problem

The semiconductor industry faces challenges with delamination of bumps from conductive pads due to reduced contact area, affecting electrical performance and reliability as feature sizes decrease, leading to increased difficulty in bonding bumps on conductive plugs.

Innovation Solution

A semiconductor assembly with a T-shaped conductive plug and protective/isolation liners is manufactured, where the conductive plug has a first block in the passivation layer and a second block connecting to the conductive pad, surrounded by protective and isolation liners, and a diffusion barrier film, increasing the contact area and adhesion strength.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If feature size is reduced to increase integration density, then more components can be integrated into a given chip area, but the contact area between conductive pads and bumps decreases leading to delamination

Engineering Contradiction:
Improveintegration densityVSAvoidbonding reliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The conductive plug transitions from a conventional planar structure to a T-shaped three-dimensional structure. The first block has a larger footprint area than the second block, creating a T-shaped configuration when viewed from above. This dimensional change increases the bonding interface area without increasing the vertical height, thereby improving bonding reliability while maintaining the reduced feature size for high integration density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The conductive plug is formed as a composite structure with two blocks of conductive material having different cross-sectional areas. The first block has a larger footprint area providing enhanced bonding surface, while the second block has a smaller area for precise alignment with the conductive pad. This composite configuration optimizes both bonding reliability and electrical connection.

Inventive Principle:
Principle #40Composite materials

2Productivity

If feature size is reduced to increase integration density, then more components can be integrated into a given chip area, but the contact area between conductive pads and bumps decreases

Engineering Contradiction:
Improveintegration densityVSAvoidcontact area
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

The conductive plug adopts a T-shaped three-dimensional structure where the first block provides a larger footprint area for bonding. This vertical stacking approach increases the effective contact area without expanding the lateral footprint, enabling maintained bonding area despite reduced feature sizes required for high integration density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of manufacture

If conventional conductive plug structure is used, then manufacturing process is simple, but bonding of bumps is difficult and delamination occurs

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidbonding reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The conductive plug is segmented into two distinct blocks: a first block with larger footprint area for bonding and a second block with smaller area for electrical connection. This segmentation allows each block to perform its specific function optimally, improving bonding reliability while the entire structure can be formed through standard semiconductor fabrication processes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The conductive plug structure changes the geometric parameters of the bonding interface by creating a T-shaped configuration with varying cross-sectional areas. The first block has a larger footprint area parameter optimized for bonding, while the second block has a smaller area parameter optimized for electrical connection, improving overall bonding reliability without complicating the manufacturing process.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS11133251B1Semiconductor assembly having T-shaped interconnection and method of manufacturing the same
Publication Date: 2021.09.28 NAN YA TECH
  • US11133251B1 patent drawing
  • US11133251B1 patent drawing
  • US11133251B1 patent drawing

AI summary

The present disclosure provides a semiconductor assembly and method of manufacturing the same. The semiconductor assembly includes a semiconductor device, a bulk semiconductor, a passivation layer, at least one conductive plug, a plurality of protective liners, and a plurality of isolation liners. The bulk semiconductor is disposed over the semiconductor device. The passivation layer covers the bulk semiconductor. The conductive plug comprises a first block disposed in the passivation layer and a second block disposed between the first block and the conductive pad, wherein portions of peripheries of the first and second blocks of the conductive plug are surrounded by the protective liners and the isolation liners.