T-Shaped Supporting Layer for Micro Semiconductor Device Transfer
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Solution Overview
Problem
The integration density of micro semiconductor devices is limited due to the need for a supporting structure on both sides, which restricts their dense arrangement on a temporary carrier and complicates their transfer to a receiving substrate, potentially damaging the devices during the process.
Innovation Solution
A micro semiconductor structure with a supporting layer disposed on the top surface of a substrate, featuring a T-shaped profile with a longer upper portion and shorter bottom portion, made of materials with varying Young's modulus and toughness, allowing for effective support and transfer of micro semiconductor devices without direct contact with electrodes or sidewalls, enabling denser arrangement and reducing transfer complications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a supporting structure is disposed on both sides of micro devices, then the micro devices can be fixed on a temporary carrier, but the integration density of micro devices is reduced and transfer to receiving substrate becomes complicated
Solution Approach 1:
The supporting layer is segmented into two portions: a first portion that contacts the micro device and a second portion that extends to the substrate. This segmentation allows the supporting layer to provide stable fixation while occupying less space, thereby increasing integration density without compromising reliability
Solution Approach 2:
The supporting layer extends in the thickness direction (vertical dimension) rather than only in the planar direction. By having the second portion extend downward to contact the substrate, the structure provides stable fixation through vertical support, freeing up horizontal space for denser device arrangement
2Reliability
If a supporting structure is disposed on both sides of micro devices, then the micro devices can be fixed on a temporary carrier, but the transfer process becomes complicated and may damage devices
Solution Approach 1:
The supporting layer is designed to be selectively removable from the temporary carrier while leaving the micro devices intact on the receiving substrate. The first portion can be detached after transfer, simplifying the overall process and reducing device complexity exposure to damage risks
Solution Approach 2:
The supporting layer acts as an intermediary between the micro device and the temporary carrier during transfer. It provides a controlled interface that facilitates safe transfer operations, and can be designed to release under specific conditions, reducing transfer process complexity
3Device complexity
If the supporting layer has equal length portions, then the structure is simple, but the micro devices cannot be densely arranged on the temporary carrier
Solution Approach 1:
The supporting layer employs asymmetric design with a first portion and a second portion of different lengths. The first portion (contacting the device) is shorter while the second portion (extending to substrate) is longer, creating an asymmetric T-shaped structure that optimizes both space utilization for high integration density and structural simplicity for ease of fabrication
Data Source
AI summary
A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.