Tamper Detection in Magnetic Memory Devices

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Solution Overview

Problem

Magnetic memory devices are vulnerable to tampering attempts, such as external magnetic fields or electromagnetic interference, which can alter the stored data, and existing techniques lack effective methods to detect and respond to such attempts.

Innovation Solution

Incorporating detection memory cells with initial predetermined states and reference bits to detect tampering attempts, and employing circuitry to disable memory operations and generate mock currents to maintain device functionality appearance while preventing data access.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If magnetic memory devices are used in applications like smart meters or gaming machines, then the device can store information effectively, but the device becomes vulnerable to tampering attempts through external magnetic fields or electromagnetic interference

Engineering Contradiction:
Improvedata integrityVSAvoidtampering vulnerability
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by pre-programming detection memory cells with initial predetermined states before the device is put into service. These detection cells are configured in advance to detect any unauthorized changes. The system also pre-establishes reference bits that represent the expected initial states, enabling immediate detection of tampering attempts without requiring external intervention or complex real-time analysis.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent introduces detection memory cells as intermediary elements between the data storage memory cells and the external environment. These detection cells act as sensors that monitor for tampering attempts. Additionally, reference bits serve as intermediaries for comparison, mediating the verification process by providing a stable reference against which current detection cell states can be compared to identify unauthorized changes.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If detection memory cells with initial predetermined states are incorporated to detect tampering attempts, then tampering detection capability is improved, but device complexity increases

Engineering Contradiction:
Improvetamper detection capabilityVSAvoidmemory cell structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies homogeneity by using detection memory cells that have the same structure and characteristics as the data storage memory cells. Both types of cells are organized in similar array configurations and use identical memory cell architectures. This uniformity simplifies the overall device design, allows for standardized manufacturing processes, and enables the use of existing memory cell fabrication techniques without requiring entirely new cell structures for detection purposes.

Inventive Principle:
Principle #33Homogeneity

3Reliability

If circuitry is employed to disable memory operations upon detecting tampering attempts, then data integrity is protected, but device functionality is reduced

Engineering Contradiction:
Improvedata protectionVSAvoiddevice functionality
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The patent applies the taking out principle by separating the detection and response functions from the normal data storage and retrieval operations. When tampering is detected, the system extracts or isolates the affected memory operations by disabling only the specific memory cells or regions that show signs of tampering, rather than shutting down the entire device. This allows the majority of the device to continue functioning normally while protecting the compromised portions.

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Effectively detects tampering attempts and prevents further data alteration by disabling memory operations and simulating normal device behavior, ensuring data integrity in applications like smart meters and gaming machines.

Implementation Method 1

the voltage drop across a magnetic tunnel junction (MTJ) in each memory cell can be varied based on the relative magnetic states of the magnetoresistive layers within the memory cell

Methodology Applied
Scientific EffectMagnetoresistance: Magnetoresistance

Implementation Method 2

a user may attempt to tamper with the data stored within the memory device by applying an external magnetic field or other external stimulus

Methodology Applied
Scientific EffectMagnetic Field: Magnetic Field

Data Source

PatentEP2954415B1Tamper detection and response in a memory device
Publication Date: 2020.12.02 EVERSPIN TECHNOLOGIES INC
  • EP2954415B1 patent drawingFigure 1
  • EP2954415B1 patent drawingFigure 2
  • EP2954415B1 patent drawingFigure 3

AI summary

A technique for detecting tampering attempts directed at a memory device includes setting each of a plurality of detection memory cells to an initial predetermined state, where corresponding portions of the plurality of detection memory cells are included in each of the arrays of data storage memory cells on the memory device. A plurality of corresponding reference bits on the memory device permanently store information representative of the initial predetermined state of each of the detection memory elements.