TaN Barrier Layer Deposition Using Multi-Coil Field Tuning
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Solution Overview
Problem
As semiconductor devices continue to integrate more components into smaller areas, challenges arise in the deposition processes, particularly in forming conformal barrier layers within interconnect structures, leading to issues with film density and coverage uniformity.
Innovation Solution
A physical vapor deposition process using multiple coils to adjust the electromagnetic field and separation distances during the deposition of tantalum nitride barrier layers, combined with atomic layer deposition, to achieve a gradient composition and improved conformality, density, and resistivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If physical vapor deposition is used to deposit barrier layers, then deposition speed and film density are improved, but conformal coverage and composition uniformity deteriorate
Solution Approach 1:
The deposition process is segmented into multiple steps with different coil configurations. The first coil deposits initial barrier material, then the second coil deposits additional material with different parameters, creating a composite structure that achieves both high density and conformal coverage.
Solution Approach 2:
Different regions of the barrier layer are deposited with different properties. The first coil creates a dense base layer, while the second coil adds a conformal outer layer with optimized composition, achieving local optimization of both density and coverage uniformity.
2Productivity
If physical vapor deposition is used to deposit barrier layers, then deposition speed is improved, but film composition uniformity deteriorates
Solution Approach 1:
The deposition process is divided into two stages using separate coils. The first coil deposits material with one composition profile, and the second coil deposits material with a different composition profile, resulting in a composite barrier layer with averaged and stabilized composition throughout.
Solution Approach 2:
The barrier layer is formed as a composite structure with two distinct deposition zones. Each zone contributes different compositional characteristics, and their combination produces a barrier layer with superior composition uniformity and stabilized tantalum to nitrogen ratio.
3Manufacturing precision
If atomic layer deposition is used instead of physical vapor deposition, then conformal coverage is improved, but deposition speed deteriorates
Solution Approach 1:
The patent merges the advantages of both PVD and ALD by using PVD for the base layer deposition (achieving high speed and density) and combining it with controlled deposition parameters that simulate ALD-like conformal coverage, thus achieving both speed and precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in a barrier layer with a tantalum to nitrogen ratio greater than 1.3, film density greater than 13 g/cm3, and conformal coverage, addressing the challenges of uniformity and density while maintaining the benefits of physical vapor deposition.
Implementation Method 1
A physical vapor deposition process using multiple coils to adjust the electromagnetic field and separation distances during the deposition of tantalum nitride barrier layers
Data Source
AI summary
A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.