Perovskite-Silicon Tandem Cell Composite Interface for Layer Adhesion
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Solution Overview
Problem
The adhesion between the perovskite-based active layer and the overlying conductive or semiconductor layer in tandem photovoltaic devices is weak due to the use of apolar solvents, leading to mechanical instability and degradation issues, particularly when forming the upper conductive or semiconductor layer in NIP or PIN structures.
Innovation Solution
A composite layer combining perovskite material and P-type or N-type material is integrated at the surface of the lower semiconductor layer, with a gradient of perovskite material mass ratio decreasing towards the opposite face, forming an interpenetrating structure to enhance adhesion and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If solvent-based deposition process is used to form upper conductive or semiconductor layer on perovskite surface, then the perovskite layer can be deposited, but the adhesion between perovskite and upper layer becomes weak leading to mechanical instability
Solution Approach 1:
The patent changes the chemical parameters of the deposition solution by selecting specific solvents (dimethyl carbonate, diethyl carbonate, ethyl methyl carbonate) that are compatible with perovskite. This parameter change allows the upper conductive or semiconductor layer to be deposited while maintaining strong adhesion to the perovskite layer, resolving the mechanical instability issue.
Solution Approach 2:
The patent creates a composite interface between the perovskite layer and the upper conductive or semiconductor layer by using a specially formulated solution that contains both perovskite precursors and the conductive/semiconductor material precursors. This composite approach ensures strong interfacial adhesion while maintaining the functional properties of both materials.
2Object-affected harmful factors
If apolar solvent is used to form upper conductive or semiconductor layer, then perovskite degradation is prevented, but adhesion between layers becomes particularly weak
Solution Approach 1:
The patent changes the polarity parameter of the solvent from apolar to a specific intermediate polarity range by selecting carbonates (dimethyl carbonate, diethyl carbonate, ethyl methyl carbonate). This parameter change allows the solvent to prevent perovskite degradation while simultaneously providing sufficient adhesion between layers, resolving the contradiction between protection and bonding.
Solution Approach 2:
The patent applies different local qualities to different regions of the solution: the carbonate solvent provides a protective environment for perovskite (preventing degradation), while the specific chemical composition of the solution ensures strong local adhesion at the interface between perovskite and the upper conductive or semiconductor layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite layer improves mechanical stability and reduces optical losses, maintaining photovoltaic conversion efficiency comparable to separate layer structures while simplifying the manufacturing process.
Implementation Method 1
The active layer is a layer intended to absorb photons. It enables the creation of free charge carriers (holes and electrons).
Implementation Method 2
subjecting the whole to a heat treatment conducive to the elimination of the solvents and the crystallisation of the perovskite material
Implementation Method 3
subjecting the whole to a heat treatment conducive to the elimination of the solvents
Data Source
AI summary
Tandem photovoltaic device combining a silicon-based sub-cell and a perovskite-based sub-cell comprising a P- or N-type material/perovskite composite layer including: A/a silicon-based sub-cell A; and B/a perovskite-based sub-cell B, comprising at least: —a conductive or semiconductor layer of the N type in the case of a NIP structure, or of the P type in the case of a PIN structure, and—a composite layer, superimposed over the lower conductive or semiconductor layer, comprising at least one perovskite material and at least one material of the P type in the case of a NIP structure or of the N type material in the case of a PIN structure.