Tapered Trapping Apertures for Particle-Safe Semiconductor Singulation
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Solution Overview
Problem
Miniaturized semiconductor devices, such as MEMS, are susceptible to performance degradation due to powder accumulation on their active areas, which is exacerbated by manufacturing processes that generate powder, including the formation of 'candle sticks' that break later, depositing powder on the device.
Innovation Solution
Incorporating a trapping region with tapered trapping apertures that guide particles into trapping chambers, utilizing a tapered shape to funnel particles into chambers and prevent their exit, and manufacturing methods that include forming these apertures and chambers before singulating semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If laser beam cracking is used to singulate semiconductor wafers, then singulation efficiency is improved, but powder generation increases
Solution Approach 1:
The patent introduces trapping regions with apertures that convert the harmful powder generated by laser cracking into a contained element. The apertures are positioned and sized to allow laser beams to pass through while trapping powder particles in designated regions, thereby converting the harmful byproduct of efficient singulation into a contained element that does not affect device performance
Solution Approach 2:
The trapping region acts as an intermediary between the laser singulation process and the active device areas. It intercepts and contains powder particles before they can reach and contaminate the active regions, mediating the conflict between efficient singulation and powder contamination
2Reliability
If trapping apertures are made narrow to prevent particle exit, then particle retention is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs tapered apertures that are narrow at the bottom and wider at the top, utilizing the vertical dimension to achieve particle retention. This geometric approach allows the aperture to be sufficiently narrow at its narrowest point to prevent particle exit while maintaining manufacturability through standard fabrication processes, avoiding the need for extremely tight dimensional control throughout the entire aperture structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively traps powder generated during manufacturing and prevents its accumulation on the active area, maintaining device performance by ensuring particles are captured in the trapping chambers.
Implementation Method 1
a particle may be subjected to a force towards the second trapping aperture portion by effect of its own weight, e.g. by virtue of its barycenter being spaced from supporting points on which the particle is supported, which implies a momentum on the particle, which therefore tends to move (e.g. by rolling) towards the second trapping aperture portion
Data Source
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AI summary
The invention relates to a semiconductor device semiconductor device (1) comprising: an active region (10); and a trapping region (20) positioned peripherally with respect to the active region (10), the trapping region (20) presenting trapping apertures (30) permitting the passage of particles, the trapping apertures (30) being in fluid communication with at least one trapping chamber (40) for trapping the particles. The invention also relates to a method for manufacturing a plurality of semiconductor devices from one semiconductor wafer presenting a plurality of semiconductor device regions to be singulated along dicing portion line. The method may include: in each semiconductor device region (101), making a semiconductor device precursor (101) by making or applying at least one active element in an active region (10), making at least one trapping chamber (40) and making, in a trapping region (20) of the semiconductor device region (101) positioned more peripherally than the active region (10), trapping apertures (30) in fluid communication with the at least one trapping chamber (40); and singulating the semiconductor device regions (101) by separating the semiconductor device precursors (101) along the dicing portion lines (91), thereby obtaining the plurality of semiconductor devices (1).