Tapered Electrode Injection for High-Power Semiconductor Beam Quality
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Solution Overview
Problem
High-power semiconductor devices struggle to achieve high light-output brightness and high beam quality simultaneously while maintaining low cost and high integration.
Innovation Solution
A lateral-optical-mode-controlled high-power semiconductor device with a progressive thickness reduction in the electrode injection region, combined with a thermal compensation layer and specific layer configurations to manage thermal conductivity and refractive index variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high-power semiconductor devices use conventional electrode structures, then device power output can be increased, but thermal lens effects deteriorate and beam quality decreases
Solution Approach 1:
The electrode injection region employs a progressive thickness reduction structure where the thickness varies along the slow axis direction, creating different local thermal conductivity properties in different regions. This local quality variation allows the central region to have higher thermal conductivity for heat dissipation while edge regions maintain appropriate electrical contact, thereby reducing thermal lens effects and improving beam quality without sacrificing power output capability
2Illumination intensity
If high-power semiconductor devices increase light-output brightness, then optical power is improved, but beam quality and thermal management deteriorate
Solution Approach 1:
The invention changes the geometric parameter of the electrode injection region by implementing a progressive thickness reduction along the slow axis direction. This parameter modification creates a thermal conductivity gradient that enhances heat dissipation from the active layer, effectively managing temperature rise associated with high light-output brightness while maintaining or improving beam quality through reduced thermal lens effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device reduces thermal lens effects, improving beam quality and increasing light-output brightness while maintaining low cost and integration.
Implementation Method 1
from a central part of the electrode injection region to an edge part of the electrode injection region along a slow axis direction of the lateral-optical-mode-controlled high-power semiconductor device, thickness of the electrode injection region decreases progressively
Implementation Method 2
When a large number of electrons and holes in the state of particle number inversion recombines with each other, it results in occurrence of excited emission
Data Source
AI summary
The present invention discloses a lateral-optical-mode-controlled high-power semiconductor device, a manufacturing method thereof and a semiconductor packaging structure. The lateral-optical-mode-controlled high-power semiconductor device comprises a semiconductor substrate layer; an active layer arranged upon the semiconductor substrate layer; a front electrode layer arranged on a side of the active layer away from the semiconductor substrate layer, the front electrode layer including an electrode injection region; wherein thickness of the electrode injection region decreases progressively from a central part of the electrode injection region to an edge part of the electrode injection region along a slow axis direction of the lateral-optical-mode-controlled high-power semiconductor device. The semiconductor device has high light-output brightness, high beam quality, as well as low cost and high degree of integration.