Tapered Source-Drain Electrode Field-Effect Transistor Mobility
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Solution Overview
Problem
Conventional field-effect transistors produced using a coating process exhibit insufficient mobility and high mobility variation due to the geometry of the source/drain electrodes, particularly when these electrodes form large angles with the substrate in their cross-section parallel to the channel length direction.
Innovation Solution
The source/drain electrodes are designed with a taper shape in their cross-section parallel to the channel length direction and perpendicular to the substrate, with a taper angle of 70° or less, to improve mobility and reduce variation, using a semiconductor material formed through a coating process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the source/drain electrode forms a large angle with the substrate in cross-section, then the electrode coverage area is increased, but the mobility and uniformity of the semiconductor layer are deteriorated due to void generation at the interface
Solution Approach 1:
The patent changes the geometric parameters of the electrode by introducing a taper angle constraint (70° or less), which optimizes the interface geometry between electrode and semiconductor layer. This parameter modification prevents void formation while maintaining adequate coverage area, thereby improving mobility uniformity without sacrificing electrode functionality.
2Manufacturing precision
If the source/drain electrode has a tapered shape with small taper angle, then the mobility and mobility uniformity are improved, but the electrode coverage area is reduced
Solution Approach 1:
The patent establishes an optimal range for the taper angle (70° or less) that balances two competing requirements: achieving sufficient mobility uniformity by preventing void formation, and maintaining adequate electrode coverage area for functional performance. This parameter optimization resolves the contradiction between precision and area.
Data Source
AI summary
Provided is a field-effect transistor which has a high mobility and a low variation of mobility.A field-effect transistor at least comprising a substrate, a semiconductor layer, a source electrode, and a drain electrode is produced by forming the source electrode and/or the drain electrode so that the source electrode and/or the drain electrode has a taper shape in a cross-section which is parallel with a channel length direction and perpendicular to the substrate, and forming the semiconductor layer through coating process.