Tapered Pre-Heat Ring for Uniform Chamber Deposition
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Solution Overview
Problem
The non-uniformity of process gas temperature and flow path in semiconductor processing chambers leads to non-uniform deposition on substrates and undesired depositions on chamber components, resulting in reduced product quality and increased cleaning costs.
Innovation Solution
A pre-heat ring with a tapered body is introduced in the semiconductor processing chamber to control the flow of purge gases, reducing the interaction with process gases and minimizing undesired depositions on chamber components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If additional gas heating components and substrate rotation are used to compensate for non-uniform deposition, then deposition uniformity is improved, but processing gas is lost to undesired depositions and cleaning cycles increase
Solution Approach 1:
The pre-heat ring performs preliminary heating of the process gas before it reaches the substrate. By pre-heating the gas in a controlled manner through the tapered structure, the gas achieves the necessary temperature for uniform deposition without requiring additional heating components during the deposition process, thereby reducing processing gas loss to undesired depositions
Solution Approach 2:
The tapered geometry of the pre-heat ring changes the temperature distribution parameter of the process gas as it flows through the structure. The varying cross-sectional area along the taper creates a controlled temperature gradient that optimizes gas heating efficiency and reduces thermal losses to chamber components
2Reliability
If chamber cleaning cycles are performed frequently to remove undesired depositions, then chamber component cleanliness is improved, but operational downtime and cleaning costs increase
Solution Approach 1:
The pre-heat ring prevents undesired depositions from forming in the first place by controlling the temperature and flow of process gas before it contacts chamber components. This preliminary control action eliminates the need for frequent cleaning cycles, maintaining operational efficiency while ensuring chamber cleanliness
3Productivity
If the process gas temperature is increased to raise activation energy for film formation, then deposition rate is improved, but non-uniform temperature distribution causes non-uniform deposition
Solution Approach 1:
The tapered structure of the pre-heat ring creates different local heating conditions at different radial positions. The varying cross-sectional area provides enhanced heating at the edges compared to the center, compensating for natural edge effects and achieving uniform temperature distribution across the substrate surface, thereby ensuring uniform deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The pre-heat ring with a tapered body effectively reduces undesired depositions on chamber components, extending the service interval, improving film quality, and increasing production rates while reducing the frequency of cleaning cycles.
Implementation Method 1
The process gas temperature is adjusted as the gas passes over a gas heating component to raise activation energy for formation of a film or layer on the substrate
Implementation Method 2
The pre-heat ring comprises a tapered wall facing the radially outward surface. The tapered wall narrows towards a top surface of the pre-heat ring and towards the substrate support
Implementation Method 3
The material may be deposited in a lateral flow chamber by flowing a process gas parallel to the surface of a substrate positioned on a support and thermally decomposing the process gas to deposit a material from the process gas onto the substrate surface
Data Source
AI summary
A pre-heat ring and a process chamber having the same are described herein. In one example, a process chamber for film deposition comprises a chamber volume, a substrate support disposed in the chamber volume, the substrate support having a radially outward surface, and a pre-heat ring surrounding the substrate support. The pre-heat ring comprises a tapered wall facing the radially outward surface. The tapered wall narrows towards a top surface of the pre-heat ring and towards the substrate support.