Semiconductor Target Layer Patterning for Different-Depth Openings
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to inefficiencies and increased costs, necessitating improved methods for forming semiconductor device structures with varying features and functionalities.
Innovation Solution
A method involving the formation of staggered energy-sensitive patterns and a lining layer over a semiconductor substrate, followed by an etching process to create openings of different depths, allowing for simultaneous formation of features with distinct etching rates and materials, thereby reducing fabrication time and cost while enhancing design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple separate etching processes are used to form features at different levels, then etching precision is improved, but manufacturing complexity and time increase
Solution Approach 1:
The patent combines multiple etching operations into a single unified etching process. By forming a composite mask layer that integrates first and second mask layers with different etching selectivity, the method enables simultaneous etching of first and second openings at different levels and depths through one process step, thereby reducing manufacturing complexity while maintaining etching precision
Solution Approach 2:
The mask layer is segmented into distinct regions with different etching resistances. The first mask layer region has different etching selectivity compared to the second mask layer region, allowing the etching process to naturally create openings of different depths and characteristics within the same process step, thus avoiding multiple separate etching processes
2Manufacturing precision
If multiple separate etching processes are used to form features at different levels, then etching precision is improved, but fabrication time increases
Solution Approach 1:
The patent merges multiple etching processes into a single unified process by using a composite mask layer structure. This allows first openings and second openings to be formed simultaneously in one etching operation, significantly reducing fabrication time while preserving the precision required for different opening depths and features
Solution Approach 2:
The composite mask layer is prepared in advance with predetermined etching selectivity characteristics. By pre-configuring the mask layer structure with first and second mask layer regions having different etching resistances, the system is ready to perform multi-depth etching in a single process step, eliminating the need for sequential processes and reducing overall fabrication time
3Manufacturing precision
If traditional multi-step processes are used, then manufacturing precision is maintained, but fabrication cost increases
Solution Approach 1:
The patent reduces fabrication cost by merging multiple process steps into a single unified etching process. The composite mask layer enables simultaneous formation of different opening types, reducing the number of process steps, equipment usage, and manufacturing time, all of which contribute to lower fabrication costs while maintaining precision through the selective etching design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient creation of semiconductor device structures with varied features, reducing fabrication costs and time while offering greater design flexibility, addressing the complexity and inefficiencies in current semiconductor manufacturing processes.
Implementation Method 1
performing an etching process to form a first opening and a second opening in the target layer. The first opening and the second opening have different depths
Data Source
AI summary
A method for preparing a semiconductor device structure includes forming a target layer over a semiconductor substrate, and forming a plurality of first energy-sensitive patterns over the target layer. The method also includes forming a lining layer conformally covering the first energy-sensitive patterns. A first opening is formed over the lining layer and between the first energy-sensitive patterns. The method further includes filling the first opening with a second energy-sensitive pattern, and performing an etching process to form a plurality of second openings and a third opening in the target layer, wherein the third opening is between the second openings, and the second openings and the third opening have different depths.