Targeted Temporal ALD Head With Dual-Chamber Gas Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional ALD processes, both temporal and spatial, are time-intensive and require masking, which introduces manufacturing costs and are not suitable for large surfaces, limiting their efficiency and applicability.
Innovation Solution
Targeted temporal ALD systems with an ALD head comprising an inner and outer housing, featuring specific ports for precursor and inert gas flow, allowing controlled application to discrete areas without masking, and enabling movement in three orthogonal directions for precise film growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If temporal ALD processing is used to grow films with perfect conformality and uniformity, then film quality is improved, but processing time increases significantly
Solution Approach 1:
The reaction chamber is divided into multiple independently controllable zones, each capable of receiving different precursors. This segmentation allows simultaneous precursor introduction in different zones, eliminating the sequential timing constraints of conventional temporal ALD while maintaining the controlled reaction environment needed for high-quality film growth.
Solution Approach 2:
The patent transitions from temporal separation of precursors (time dimension) to spatial separation of precursors (space dimension). By arranging precursor sources and reaction zones in different spatial locations within the chamber, the system achieves targeted ALD processing without the time penalties of sequential processing.
2Area of stationary object
If the entire product is positioned within the sealed reaction chamber for ALD processing, then complete surface coverage is achieved, but masking is required for targeted areas increasing complexity and cost
Solution Approach 1:
The reaction chamber creates localized reaction zones where precursors are introduced only to specific areas of the substrate. This local quality approach enables selective film growth on targeted regions without requiring physical masks, as the precursor delivery system itself provides spatial selectivity through controlled gas flow and zone isolation.
3Manufacturing precision
If conventional temporal ALD chambers are used, then precise film growth is achieved, but the chambers are too small for large surface areas
Solution Approach 1:
The large reaction chamber is segmented into multiple independently controllable zones, each capable of precise ALD processing. This segmentation allows the system to maintain the precision of small chambers while processing large substrates by dividing the large surface into multiple treatment zones that can be addressed sequentially or simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates efficient, cost-effective, and time-saving ALD processes on targeted areas, suitable for large surfaces, eliminating the need for masking and reducing cycle duration.
Implementation Method 1
gaseous reactants (i.e., precursors) are introduced into the reaction chamber alternately, one at a time. As the different precursors are pulsed into the reaction chamber, they saturate the surface of the product/substrate and cause a surface chemical reaction with each other. These surface chemical reactions form/grow a film at the surface of the product
Implementation Method 2
To avoid any undesired gas phase reactions within the reaction chamber during the ALD process, the chamber is purged between each precursor pulse by an inert gas (e.g., nitrogen)
Data Source
AI summary
A targeted temporal ALD device includes an ALD head that is configured to perform targeted ALD to discrete targeted areas of products/substrates positioned on the mounting surface(s) of the ALD device. The ALD head includes: (i) an outer housing; (ii) an inner housing positioned within the outer housing; and (ii) a plurality of ports formed into the inner housing and outer housing for connecting at least one precursor gas source and at least one inert gas source to the ALD head. The precursor gases are applied to targeted areas of the products/substrates from an inner chamber in the inner housing, while inert gases are applied to an outer chamber between the inner and outer housings to limit/control application of the precursor gases to a desired target area. Some targeted temporal ALD devices are also configured to position/reposition the ALD head in three orthogonal directions relative to product(s)/mounting surface(s).