TCAM Cell Backside Via Routing for Parasitic Reduction
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Solution Overview
Problem
The increasing demand for high integration in semiconductor processes leads to smaller wiring dimensions, which amplifies the impact of parasitic components in integrated circuits, necessitating an efficient method for routing wires and vias to improve Power Performance Area (PPA) while reducing power consumption and operating speed.
Innovation Solution
The implementation of a ternary content-addressable memory (TCAM) cell using backside wirings, where a backside via penetrates the substrate vertically to connect a backside wiring layer with a frontside wiring layer, reducing routing complexity and enhancing power distribution by using backside power rails and signal lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If wiring dimensions are decreased for high integration, then integration density is improved, but parasitic components increase
Solution Approach 1:
The patent utilizes the backside of the substrate as an additional dimension for wiring routing. By placing power rails and signal lines on the backside wiring layer and connecting them to the frontside through via holes, the design distributes wiring across three-dimensional space, reducing the burden on frontside wiring and minimizing parasitic effects from crowded two-dimensional routing.
2Device complexity
If backside wirings are used for TCAM cell, then routing complexity is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent divides the wiring function into separate layers: the frontside wiring layer handles bit lines, complementary bit lines, and match lines, while the backside wiring layer handles power rails and word lines. This segmentation allows each layer to be optimized independently, simplifying the routing design process while the via hole connections provide straightforward vertical inter-layer coupling that is well-suited to standard semiconductor manufacturing processes.
Data Source
AI summary
An example integrated circuit includes a ternary content-addressable memory (TCAM) cell on a front side of a substrate, a backside via extending through the substrate in a vertical direction with respect to the substrate, a backside wiring layer on a back side of the substrate, and a frontside wiring layer above the TCAM cell in the vertical direction. The TCAM cell includes a first cell storing a first value, a second cell storing a second value, and a comparison circuit connected with the first and second cells. The backside wiring layer includes at least one backside power rail configured to transmit a supply voltage to the TCAM cell through the backside via. The frontside wiring layer includes a bit line connected with the first and second cells, a complementary bit line connected with the first and second cells, and a match line connected with the comparison circuit.