Through-Circuit Via Structure for Flexible Front-Back IC Interconnects
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Solution Overview
Problem
The semiconductor industry faces challenges in scaling down semiconductor devices while maintaining efficient interconnect routing, as existing technologies restrict routing flexibility between front and back interconnect structures.
Innovation Solution
The implementation of through-circuit vias (TCVs) that extend through front and back interconnect structures and the substrate, providing flexible and highly conductive routing between these structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional interconnect routing is used, then manufacturing process is simpler, but routing flexibility between front and back interconnect structures is restricted
Solution Approach 1:
The patent introduces through-circuit vias (TCVs) that extend vertically through the substrate from the front surface to the back surface, adding a third-dimensional routing path. This allows interconnect structures to route signals through the substrate thickness, enabling flexible routing between front and back interconnect layers without being constrained to planar two-dimensional paths alone.
Solution Approach 2:
The interconnect routing is divided into multiple segments: front interconnect structures on the front surface, through-circuit vias penetrating the substrate, and back interconnect structures on the back surface. This segmentation allows independent optimization of each segment while achieving overall routing flexibility through their combination.
2Productivity
If device dimensions are scaled down, then storage capacity and processing speed improve, but manufacturing process complexity increases
Solution Approach 1:
The substrate is prepared in advance with through-circuit vias formed before final interconnect structure assembly. This preliminary action of pre-forming vertical routing paths simplifies subsequent manufacturing steps by establishing the three-dimensional routing framework early in the process, making it easier to integrate scaled-down devices with complex interconnect requirements.
Data Source
AI summary
An integrated circuit (IC) with through-circuit vias (TCVs) and methods of forming the same are disclosed. The IC includes a semiconductor device, first and second interconnect structures disposed on first and second surfaces of the semiconductor device, respectively, first and second inter-layer dielectric (ILD) layers disposed on front and back surfaces of the substrate, respectively, and a TCV disposed within the first and second interconnect structures, the first and second ILD layers, and the substrate. The TCV is spaced apart from the semiconductor device by a portion of the substrate and portions of the first and second ILD layers. A first end of the TCV, disposed over the front surface of the substrate, is connected to a conductive line of the first interconnect structure and a second end of the TCV, disposed over the back surface of the substrate, is connected to a conductive line of the second interconnect structure.