TEG Circuit Drain Voltage Control Without DAC and ADC Complexity

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Solution Overview

Problem

Existing semiconductor technologies face challenges in accurately controlling drain voltage and measuring electrical characteristics of on-chip transistors due to the complexity and size increase caused by digital analog converters (DAC) and analog digital converters (ADC), leading to decreased accuracy in threshold voltage and saturation current measurements.

Innovation Solution

A TEG circuit with an amplifier, variable resistor, and gate driving circuit is employed to accurately control the drain voltage and measure electrical characteristics of on-chip transistors, utilizing switches and multiplexers to determine threshold voltage and saturation current by measuring voltage differences across the resistor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If DAC and ADC are used to accurately control drain voltage and measure test results, then measurement precision is improved, but device complexity increases

Engineering Contradiction:
Improvedrain voltage control accuracyVSAvoidcircuit complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts and eliminates the DAC and ADC components from the test circuit. Instead of using these complex conversion circuits, the invention uses a simplified approach where the transistor under test directly generates the drain voltage through its own characteristics, removing the need for external conversion devices while maintaining measurement accuracy.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The transistor under test serves multiple functions simultaneously: it acts as both the device being characterized and the voltage generation element. By utilizing the transistor's inherent current-voltage characteristics to generate the drain voltage, the circuit achieves multi-functionality without requiring separate DAC/ADC components, thereby reducing overall circuit complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Area of stationary object

If DAC and ADC bit resolution is reduced to decrease area, then device area is reduced, but manufacturing precision decreases

Engineering Contradiction:
ImproveDAC and ADC areaVSAvoiddrain voltage generation accuracy
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The patent removes the DAC and ADC components entirely from the circuit, eliminating the trade-off between their area and precision. The drain voltage is generated directly by the transistor under test using its natural electrical characteristics, which does not require any bit-resolution-based conversion, thus achieving high precision without the area penalty of high-resolution converters.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The transistor under test serves itself by generating the required drain voltage through its own electrical characteristics. This self-service mechanism eliminates the need for external voltage generation circuits with finite resolution, allowing the system to achieve precise voltage control without the area constraints associated with high-resolution DACs.

Inventive Principle:
Principle #25Self-service

3Device complexity

If on-chip transistor electrical characteristics are measured without separate voltage control circuit, then device complexity is reduced, but measurement precision deteriorates

Engineering Contradiction:
Improvevoltage control circuit complexityVSAvoidthreshold voltage and saturation current measurement accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The transistor under test generates its own drain voltage through its inherent electrical characteristics when a gate voltage is applied. This self-service approach eliminates the need for separate voltage control circuits while maintaining measurement precision, as the voltage is naturally determined by the transistor's own parameters rather than external control mechanisms.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The transistor serves dual purposes: it is both the device under test and the voltage generation mechanism. By applying a gate voltage and utilizing the transistor's current-voltage characteristics, the drain voltage is automatically established, enabling accurate measurement of threshold voltage and saturation current without requiring additional control circuitry.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12392814B2TEG circuit, semiconductor device, and test method of the TEG circuit
Publication Date: 2025.08.19 SAMSUNG ELECTRONICS CO LTD
  • US12392814B2 patent drawing
  • US12392814B2 patent drawing
  • US12392814B2 patent drawing

AI summary

An embodiment provides a test element group (TEG) circuit, including: a first pad configured for a test voltage to be applied; an amplifier including a first input terminal connected to the first pad, a second input terminal connected to a first terminal of a test transistor, and an output terminal electrically connected to the second input terminal; a variable resistor including one terminal connected to the output terminal of the amplifier and the other terminal connected to the first terminal of the test transistor; and a gate driving circuit that supplies a gate voltage to a gate of the test transistor.