Semiconductor Voltage Control Using TEI for Low-Power Speed Stability
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Solution Overview
Problem
Existing semiconductor devices face challenges in reducing power consumption while maintaining or improving operation speed, particularly as temperature increases, as conventional digital circuits experience increased delay times with rising temperatures.
Innovation Solution
A semiconductor device utilizing temperature-effect-inversion (TEI) characteristics, where the delay time decreases with increasing temperature, is achieved by adjusting the threshold voltage of a transistor through back-biasing and dynamic voltage control, with a monitoring circuit measuring temperature and delay time to optimize driving and back-bias voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional digital circuits are used, then operation speed is maintained at normal temperatures, but delay time increases as temperature increases
Solution Approach 1:
The patent applies parameter changes by adjusting the threshold voltage of transistors in response to temperature variations. Specifically, the threshold voltage is modified to compensate for temperature-induced delays, ensuring that the delay time remains substantially constant across different operating temperatures. This parameter adjustment resolves the contradiction by maintaining both speed and reliability under varying thermal conditions.
2Use of energy by moving object
If driving voltage is reduced to lower power consumption, then power consumption decreases, but operation speed may be affected
Solution Approach 1:
The patent utilizes parameter changes by dynamically adjusting the threshold voltage of transistors to enable operation at reduced driving voltages while maintaining acceptable operation speeds. By optimizing the threshold voltage parameter, the circuit achieves lower power consumption without significant speed degradation, effectively resolving the trade-off between energy efficiency and performance.
3Speed
If threshold voltage is adjusted through back-biasing to optimize performance, then operation speed improves, but power consumption increases
Solution Approach 1:
The patent applies dynamics by implementing dynamic threshold voltage adjustment through back-biasing control. The threshold voltage is not fixed but is dynamically modified based on operating conditions such as temperature and performance requirements. This dynamic adjustment allows the system to optimize operation speed while managing power consumption increases, as the back-biasing is applied selectively rather than continuously.
Solution Approach 2:
The patent employs parameter changes by adjusting the threshold voltage through back-biasing to enhance operation speed. By modifying the threshold voltage parameter in response to temperature and performance needs, the system achieves faster operation while the associated power consumption increase is managed through controlled application of back-biasing only when performance optimization is required.
4Use of energy by moving object
If driving voltage is lowered to reduce power consumption, then power consumption decreases, but delay time increases
Solution Approach 1:
The patent resolves this contradiction through parameter changes by adjusting the threshold voltage to compensate for the increased delay time that results from lowering the driving voltage. By modifying the threshold voltage parameter, the system maintains acceptable delay times even when operating at reduced voltages, thus achieving lower power consumption without excessive time loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces power consumption and maintains or improves performance by lowering driving voltage as temperature increases, leveraging TEI characteristics to enhance operational speed and efficiency.
Implementation Method 1
a temperature sensor configured to measure the temperature of the target circuit
Implementation Method 2
a ring oscillator configured to measure the delay time between the input and the output of the target circuit
Implementation Method 3
a back-bias controller configured to adjust the back-bias voltage, wherein as the temperature increases, the delay time decreases
Data Source
AI summary
Provided is a semiconductor device including a target circuit, a monitoring circuit, and a voltage controller. The target circuit includes a transistor. The monitoring circuit is configured to measure a temperature of the target circuit or measure a delay time between an input and an output of the target circuit. The voltage controller is configured to adjust a driving voltage for driving the target circuit or a back-bias voltage for adjusting a threshold voltage of the transistor by referring to at least one of the temperature and the delay time. As the temperature increases, the delay time decreases.