Tellurium-Containing Polymers for EUV Lithography Resist Sensitivity
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Solution Overview
Problem
Extreme ultraviolet lithography (EUVL) faces challenges in resist sensitivity and line edge roughness (LER) due to low power source and noise, which affects the resolution and throughput of semiconductor manufacturing.
Innovation Solution
Development of new monomer and polymer materials containing tellurium (Te) atoms for improved photoresist compositions, including addition-type polymers and monomers with unsaturated polymerizable groups, acid-cleavable, and polar groups, which enhance imaging capabilities and sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional photoresist compositions are used in EUVL, then manufacturing process is simpler, but resist sensitivity is insufficient and line edge roughness increases
Solution Approach 1:
The patent employs composite polymer materials containing tellurium atoms integrated into the polymer structure (either in the backbone or as pendant groups). These Te-containing polymers are combined with specific photoacid generators to create a composite photoresist system that achieves high sensitivity while maintaining controlled complexity through systematic material design.
Solution Approach 2:
The invention changes the chemical composition parameters of the photoresist by incorporating tellurium-containing monomers with specific functional groups (acid-cleavable, polar, base-reactive groups). This parameter change in molecular structure enables improved resist sensitivity and reduced line edge roughness while managing composition complexity.
2Manufacturing precision
If conventional photoresist compositions are used in EUVL, then composition structure is simpler, but line edge roughness increases
Solution Approach 1:
The patent uses composite polymer materials with tellurium atoms incorporated into the polymer structure (either in the backbone or as pendant groups). These Te-containing polymers are combined with specific photoacid generators to create a composite photoresist system that achieves high sensitivity while maintaining controlled complexity through systematic material design.
Solution Approach 2:
The invention introduces specific local chemical features into the polymer structure through tellurium-containing monomers with acid-cleavable groups, polar groups, and base-reactive groups. These localized functional groups provide specific interactions that reduce line edge roughness without requiring complete restructuring of the entire composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of Te-containing monomers and polymers in photoresist compositions improves resist sensitivity and reduces line edge roughness, enabling better resolution and throughput in EUVL, addressing the limitations of current EUVL technologies.
Implementation Method 1
Extreme ultraviolet lithography (EUVL) is one of the leading technologies options to replace optical lithography for volume semiconductor manufacturing
Data Source
AI summary
New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.