TEM Acquisition Feedback for Semiconductor Thin Film Analysis

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Solution Overview

Problem

The increasing miniaturization and complexity of semiconductor devices necessitate improved automation for thin film sample preparation and observation using FIB-SEM devices and electron microscopes, requiring enhanced speed and accuracy in TEM analysis.

Innovation Solution

A semiconductor analysis system comprising a machining device, a transmission electron microscope, and a host control device that evaluates and updates acquisition conditions based on the microscope image, improving the speed and accuracy of automatic TEM observation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If automation of thin film sample preparation and observation is increased to meet the demands of miniaturized and complex semiconductor devices, then productivity and measurement precision improve, but device complexity and difficulty of detecting and measuring increase

Engineering Contradiction:
Improvespeed of automatic TEM observationVSAvoidcomplexity of semiconductor device structures
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions based on the evaluation result, and outputs updated conditions to improve subsequent observations. This feedback loop enables continuous optimization of observation parameters without manual intervention, directly addressing the need for automation in complex semiconductor analysis

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system performs self-evaluation and self-adjustment of acquisition conditions through automated image analysis and condition updating. The host control device autonomously processes TEM images, evaluates sample quality, and modifies observation parameters without requiring external manual adjustment, enabling high-speed automatic TEM observation

Inventive Principle:
Principle #25Self-service

2Measurement precision

If automation of thin film sample preparation and observation is increased to meet the demands of miniaturized and complex semiconductor devices, then measurement precision improves, but difficulty of detecting and measuring increases

Engineering Contradiction:
Improveaccuracy of TEM observationVSAvoiddifficulty of TEM image acquisition
Core Design Contradiction:
Measurement precisionVSDifficulty of detecting and measuring

Solution Approach 1:

The host control device evaluates the thin film sample based on the transmission electron microscope image and updates acquisition conditions based on the evaluation result. This automated feedback mechanism ensures optimal observation conditions are maintained, improving measurement precision while reducing the difficulty of detecting and measuring complex semiconductor structures

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system replaces manual mechanical adjustment of observation parameters with automated image-based evaluation and condition updating. The host control device uses software-based analysis to determine optimal acquisition conditions, substituting manual mechanical operations with automated computational methods that improve both precision and ease of measurement

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Data Source

PatentUS12436114B2Semiconductor analysis system
Publication Date: 2025.10.07 HITACHI HIGH TECH CORP
  • US12436114B2 patent drawing
  • US12436114B2 patent drawing
  • US12436114B2 patent drawing

AI summary

A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, and outputs the updated acquisition conditions to the transmission electron microscope device