3D Model-Based TEM Metrology for Semiconductor Structures
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Solution Overview
Problem
Conventional TEM-based metrology techniques are limited by their slow speed and inability to provide robust and accurate full geometrical and material information about 3D semiconductor structures, as they rely on 2D image processing that is not robust enough for complex patterns and material compositions.
Innovation Solution
A novel system and method utilizing a 3D model-based interpretation of TEM image data, incorporating a fitting procedure that accounts for position uncertainty and physical constraints, to determine geometric and material parameters of 3D structures, and a hybrid approach combining TEM data with other metrology tools for enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional 2D image processing algorithms are used for TEM images, then the processing speed is relatively fast, but the measurement precision and reliability of 3D structure parameters are insufficient
Solution Approach 1:
The patent transitions from 2D image processing to 3D model-based interpretation. Instead of analyzing TEM images as simple 2D patterns, the system reconstructs three-dimensional structures by integrating multiple 2D images taken at different orientations and applying 3D modeling algorithms. This dimensional transformation enables accurate extraction of 3D geometric and material parameters that cannot be obtained from single 2D projections.
Solution Approach 2:
The system performs preliminary actions by acquiring multiple TEM images at different orientations and preparing a 3D model framework before final parameter extraction. The methodology pre-processes the data by aligning images, determining relative orientations, and establishing 3D coordinate systems, which simplifies the subsequent accurate measurement of structural parameters.
2Productivity
If TEM measurements are performed at a stand-alone station with conventional processing, then the measurement accuracy is high, but the productivity is slow
Solution Approach 1:
The system implements continuous useful action by automating the entire workflow from multiple image acquisition through 3D reconstruction to parameter extraction. The automated 3D model-based interpretation continuously processes images and updates structural parameters without manual intervention, maintaining high measurement accuracy while significantly increasing throughput compared to conventional stand-alone TEM analysis.
Solution Approach 2:
The methodology creates virtual 3D copies and models of the actual semiconductor structures based on multiple 2D TEM images. These digital 3D replicas allow for repeated analysis and parameter extraction without requiring physical re-measurement, enabling high-speed virtual prototyping and analysis that maintains the accuracy of original TEM measurements while dramatically improving productivity.
3Loss of information
If 2D image processing is used, then the device complexity is low, but the loss of information about full 3D structure is significant
Solution Approach 1:
The system merges multiple 2D TEM images taken at different orientations and combines them with 3D model data to reconstruct the complete three-dimensional structure. By integrating information from multiple imaging angles and merging it with computational 3D modeling, the system recovers geometric and material information that would be lost in any single 2D projection, providing comprehensive 3D structural characterization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate and robust retrieval of geometric and material parameters of 3D structures, improving the robustness and accuracy of metrology results, and enhancing the performance of TEM and other metrology measurements by providing full geometrical and material interpretation.
Implementation Method 1
a broad beam impacts the sample and electrons that are transmitted through the sample are focused to form an image of the sample
Implementation Method 2
interaction of the electrons with features of the structure within the Lamellae, forms an image of said Lamellae
Implementation Method 3
a primary electron beam is focused to a fine spot, and the spot is scanned across the sample surface
Implementation Method 4
Electrons that are transmitted through the substrate are collected by an electron detector on the far side of the sample
Data Source
AI summary
A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.