Temperature Sensor Circuit Partitioning for Low-Stress 3D IGFETs
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Solution Overview
Problem
Temperature sensor circuits in integrated circuit devices face challenges with accurate temperature determination due to high voltage stress and incompatibility with new technologies, leading to integrity issues and increased active footprint.
Innovation Solution
The integration of a temperature sensor circuit with vertically stacked horizontal channels operating at a low power supply potential, utilizing a combination of bipolar transistors and IGFETs with different process technologies to provide accurate temperature signals while minimizing voltage stress and footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the operating voltage of the temperature sensor is increased to enable operation, then the temperature sensor can function, but the transistors experience high voltage stress leading to integrity problems
Solution Approach 1:
The temperature sensor circuit is segmented into two distinct portions: a first circuit portion formed using first process technology and a second circuit portion formed using second process technology. This segmentation allows each portion to be optimized for its specific voltage requirements, with the second portion operating at a lower voltage to reduce stress on transistors while the first portion can operate at higher voltage if needed.
Solution Approach 2:
Different circuit portions are assigned different process technologies and voltage operating characteristics based on their specific functional requirements. The first circuit portion uses first process technology suitable for higher voltage operation, while the second circuit portion uses second process technology optimized for lower voltage operation, creating local quality variations that resolve the voltage stress issue.
2Adaptability or versatility
If new technology is used in the temperature sensor circuit, then compatibility with advanced processes is improved, but the circuit structure may consume more active footprint
Solution Approach 1:
The patent employs vertically stacked horizontal channels in the transistors, transitioning from a planar two-dimensional layout to a three-dimensional stacked architecture. This dimensional change allows the circuit to achieve higher integration density, accommodating advanced process technologies while reducing the active footprint consumed by the temperature sensor circuit.
Data Source
AI summary
An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature sensor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.