Temperature Sensor Voltage Generator Circuit for DRAM
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Temperature sensors in semiconductor devices, such as DRAM, face challenges in accurately monitoring temperature variations to adjust operating conditions and reduce power consumption, as existing sensors may not reliably detect temperature changes, affecting data retention and power management.
Innovation Solution
A temperature sensor comprising a voltage generator and a temperature code generator, utilizing multiple temperature elements with different resistance values to generate a temperature voltage signal and reference voltage signal, allowing for accurate temperature variation detection and adjustment, thereby improving the reliability of temperature information.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If existing temperature sensors are used in semiconductor devices, then temperature monitoring is provided, but the sensors fail to accurately detect temperature variations, affecting data retention and power management
Solution Approach 1:
The patent applies parameter changes by utilizing temperature elements whose resistance values change with temperature variations. Multiple temperature elements with different resistance characteristics (including positive and negative temperature coefficients) are used to generate voltage signals that reflect temperature changes. This enables accurate temperature detection by converting thermal parameter changes into electrical signal variations that can be processed by the sensor circuitry.
Solution Approach 2:
The patent employs composite materials by combining multiple temperature elements with different resistance characteristics in a single sensor structure. This includes using both PTC (positive temperature coefficient) and NTC (negative temperature coefficient) elements together, allowing the sensor to compensate for non-linearities and improve overall measurement accuracy across different temperature ranges through the composite response of multiple material properties.
2Measurement precision
If multiple temperature elements with different resistance values are used, then temperature variation detection accuracy is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple temperature elements into a single integrated sensor structure where multiple temperature elements are connected in parallel or series configurations within one device package. This combining approach allows the sensor to achieve high measurement precision through multiple elements while avoiding the complexity of separate discrete sensors, as all elements share common circuitry and are processed through a unified signal processing path.
Solution Approach 2:
The patent implements multi-functionality by designing the temperature sensor to simultaneously perform multiple functions: detecting absolute temperature, measuring temperature variations, generating multiple voltage signals for different processing purposes, and providing both analog and digital output capabilities. This universal design allows a single complex structure to fulfill multiple measurement and control functions, justifying the increased complexity through enhanced versatility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enables precise temperature monitoring and adjustment, enhancing the reliability of temperature information and reducing power consumption in semiconductor devices by effectively addressing temperature variations, thus improving the performance and efficiency of semiconductor memory devices.
Implementation Method 1
a first temperature element having a first resistance value and a second temperature element having a second resistance value and utilizes the first and second temperature elements to generate a temperature voltage signal having a voltage level that varies according to a variation in temperature
Data Source
AI summary
The temperature sensor includes a voltage generator and a temperature code generator. The voltage generator includes a first temperature element having a first resistance value and a second temperature element having a second resistance value and utilizes the first and second temperature elements to generate a temperature voltage signal having a voltage level that varies according to a variation in temperature. The voltage generator generates a reference voltage signal having a substantially constant voltage level regardless of the variation in temperature. The temperature code generator compares a voltage level of the temperature voltage signal with a voltage level of the reference voltage signal to generate a plurality of temperature code signals including information on the variation in temperature based on the comparison.