Temperature-Aware Read Counting for Semiconductor Memory Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor memory devices face challenges in maintaining operational reliability due to variations in temperature, leading to inconsistent read performance and potential data loss.
Innovation Solution
Incorporating a temperature measurement circuit to generate temperature codes, a block read counter to adjust read count values based on temperature, and a method of performing read operations with temperature-dependent read count increments to improve reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If read operations are performed on memory blocks without temperature compensation, then read speed is maintained, but operational reliability deteriorates due to temperature-induced variations
Solution Approach 1:
The patent changes the read count increment parameter based on temperature conditions. When temperature exceeds a threshold, the read count increment is increased to compensate for temperature-induced degradation, thereby improving operational reliability without requiring fundamental architectural changes
Solution Approach 2:
The patent implements a feedback mechanism where the temperature sensor continuously monitors temperature conditions and feeds this information to the control logic, which then adjusts the read count increment accordingly. This closed-loop control improves reliability while maintaining relatively simple device architecture
2Reliability
If temperature measurement and read count adjustment circuits are added, then data retention is improved, but device complexity increases
Solution Approach 1:
The patent employs a temperature sensor that automatically monitors temperature conditions and triggers read count adjustments without requiring external intervention. This self-service approach improves data retention while minimizing the need for additional complex control circuits
Solution Approach 2:
The patent performs temperature measurement and read count adjustment in advance before actual read operations occur. By preliminarily determining the appropriate read count increment based on temperature conditions, the system improves data retention without adding complexity to the actual read operation circuits
3Reliability
If read count increment is increased for high temperature operations, then operational reliability is improved, but energy consumption increases
Solution Approach 1:
The patent dynamically adjusts the read count increment based on real-time temperature conditions rather than using a fixed value. This dynamic adaptation ensures that energy is consumed only when necessary (at high temperatures), improving operational reliability while minimizing unnecessary energy consumption at normal temperatures
Data Source
AI summary
Provided herein are a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a memory block including a plurality of memory cells, a voltage generation circuit configured to generate a read voltage and a pass voltage to be applied to word lines of the memory block during a read operation on the memory block, a temperature measurement circuit configured to measure a temperature before or after the read operation is performed, and output a temperature code corresponding to the measured temperature, and a block read counter configured to determine a read count increment of the memory block depending on the read operation based on the temperature code, and to update a read count value for the memory block by adjusting the read count value depending on the read count increment.