Temperature Sensing Circuit Correction for Remote Semiconductor Targets
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Solution Overview
Problem
Existing semiconductor devices face challenges in accurately detecting temperature when the temperature measurement target is away from the device due to manufacturing variations of temperature detection elements and elements within the device.
Innovation Solution
A semiconductor device is configured with a temperature detection element coupled to a voltage divider circuit, utilizing polysilicon resistors with stable resistance values, a sensing resistor with the same attribute, and an arithmetic circuit to correct temperature readings based on a correction coefficient table derived from wafer testing, enhancing temperature detection accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If a temperature detection element is arranged outside the semiconductor device to measure temperature at a distant location, then the temperature measurement range is extended, but the measurement precision deteriorates due to manufacturing variations of the temperature detection element and elements in the semiconductor device
Solution Approach 1:
The patent performs preliminary measurement of the first resistor's resistance value during wafer fabrication and stores correction coefficients in advance. These pre-obtained correction coefficients are then used during operation to compensate for manufacturing variations, enabling accurate temperature detection at distant locations without requiring real-time calibration.
Solution Approach 2:
The patent changes the resistance value parameter of the first resistor by selecting different polysilicon resistor designs with specific resistance values (e.g., 10kΩ, 100kΩ, 1MΩ) during fabrication. This allows the system to adapt to different manufacturing variations and optimize temperature detection accuracy for distant measurements by choosing appropriate resistance parameters.
2Measurement precision
If manufacturing variations of temperature detection elements are not corrected, then the device complexity is reduced, but the measurement precision deteriorates
Solution Approach 1:
The patent creates a correction coefficient table that copies and stores the relationship between resistor resistance values and temperature detection accuracy obtained during wafer testing. This pre-computed correction data is then applied during operation to compensate for manufacturing variations without requiring complex real-time calculation circuits or additional hardware.
3Reliability
If polysilicon resistors with stable resistance values are used instead of other resistor types, then the reliability is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The patent implements a feedback mechanism where the actual resistance value of the polysilicon resistor, measured during wafer fabrication, is used to determine appropriate correction coefficients. This feedback loop allows the system to compensate for any manufacturing variations in the polysilicon resistor fabrication process, maintaining both high reliability and accommodating normal manufacturing tolerances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables accurate detection of temperature at distant locations by correcting for manufacturing variations and resistance values, improving temperature measurement precision.
Implementation Method 1
a first resistor coupled to the terminal, such that the first resistor is coupled in series with the temperature detection element through the terminal to thereby configure a voltage divider circuit for providing a divided voltage
Implementation Method 2
a sensing resistor configured to measure a sheet resistance, the sensing resistor having a same attribute as an attribute of the first resistor
Implementation Method 3
a temperature detection circuit configured to detect a value of a first temperature that is a temperature of the integrated circuit
Implementation Method 4
an arithmetic circuit configured to obtain the second temperature, based on the first information for the value of the first temperature detected by the temperature detection circuit and the divided voltage of the voltage divider circuit
Data Source
AI summary
A semiconductor device includes an integrated circuit having a first resistor configuring a voltage divider circuit, a sensing resistor configured to measure a sheet resistance having a same attribute as that of the first resistor, a temperature detection circuit configured to detect a value of a first temperature, a storage circuit configured to store a table including first information for each of a plurality of values of the first temperatures, the first information corresponding to a sheet resistance of the first resistor obtained based on a result of measurement of the sensing resistor, and indicating a relationship between a second temperature and a divided voltage of the voltage divider circuit at the second temperature, and an arithmetic circuit configured to obtain the second temperature, based on the first information at the value of the first temperature detected by the temperature detection circuit and the divided voltage.