Temperature-Cycled ALD for Uniform HAR Substrate Coatings

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Solution Overview

Problem

Existing atomic layer deposition (ALD) methods for high-aspect-ratio and high-surface-area substrates face challenges with precursor decomposition and non-uniformity due to long exposure times, leading to impure and non-uniform coatings, especially for less-stable reactants like TiO2, ZnO, and Au, and impractically long purge times.

Innovation Solution

A method involving cyclically varying substrate temperature during the ALD process, with lower temperatures to prevent precursor decomposition and higher temperatures for rapid purging, ensuring uniform and pure coatings with reduced process time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If long precursor exposures are used to coat HAR/HSA substrates, then uniform coating coverage is improved, but precursor decomposition and non-self-limiting side reactions increase leading to poor coating uniformity and high impurity content

Engineering Contradiction:
Improvecoating uniformityVSAvoidcoating purity
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent implements periodic temperature cycling during the ALD process, alternating between lower temperatures during precursor exposure/dose steps and higher temperatures during purge steps. This periodic temperature variation allows the system to benefit from both low-temperature precise deposition and high-temperature efficient purging, resolving the contradiction between coating uniformity and purity by preventing precursor decomposition through temperature modulation.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent dynamically changes the temperature parameter during different stages of the ALD cycle. During dose steps, temperature is reduced to prevent precursor decomposition and maintain self-limiting reactions, while during purge steps, temperature is increased to rapidly remove excess precursor and byproducts. This parameter change strategy enables simultaneous achievement of uniform coating coverage and high coating purity.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If long purge times are used to remove excess precursor, then coating purity is improved, but total process time becomes impractically long

Engineering Contradiction:
Improvecoating purityVSAvoidtotal process time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent uses periodic temperature cycling where high temperature purge steps rapidly remove excess precursor and byproducts, significantly reducing purge time compared to constant low-temperature purging. The periodic heating during purge steps accelerates the removal kinetics while maintaining coating purity, thus reducing total process time without sacrificing quality.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent changes temperature parameter during purge steps to higher values, which dramatically increases the rate of precursor and byproduct removal. This parameter change enables rapid purging within acceptable time frames while maintaining coating purity, resolving the contradiction between purity and process time.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If higher temperatures are used during precursor exposure, then deposition rate is improved, but precursor decomposition and side reactions increase

Engineering Contradiction:
Improvedeposition rateVSAvoidcoating purity
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent implements periodic temperature variation where lower temperatures are used during precursor exposure/dose steps to prevent decomposition and maintain self-limiting reactions, while higher temperatures are applied during purge steps to rapidly remove excess materials. This periodic action allows the system to achieve both controlled deposition and rapid purging without the drawbacks of constant high-temperature processing.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent dynamically adjusts temperature parameter based on process stage: low temperature during dose steps for precise self-limiting deposition, high temperature during purge steps for rapid byproduct removal. This parameter change strategy enables high productivity through optimized deposition conditions while maintaining coating purity through temperature-controlled reaction management.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Achieves uniform, pure coatings on high-aspect-ratio and high-surface-area substrates with minimal impurities and reasonable process times, applicable to various ALD materials and substrates.

Implementation Method 1

the temperature of the substrate is cycled between a lower temperature and a higher temperature in each cycle

Methodology Applied
Scientific EffectTemperature cycling:

Implementation Method 2

the lower temperature prevents decomposition of the ALD precursors and further prevents other side reactions

Methodology Applied
Scientific EffectThermal stability:

Implementation Method 3

the higher temperature enables rapid purging of excess precursor and/or byproducts produced during the reaction stage

Methodology Applied
Scientific EffectThermal desorption: Desorption

Data Source

PatentUS20250346996A1Temperature Cycling Method for Atomic Layer Deposition on High-Aspect-Ratio and High-Surface-Area Substrates
Publication Date: 2025.11.13 THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY DEPARTMENT OF HEALTH & HUMAN SERVICES
  • US20250346996A1 patent drawing
  • US20250346996A1 patent drawing
  • US20250346996A1 patent drawing

AI summary

A method for coating high-aspect-ratio (HAR) and high-surface-area (HSA) substrates via atomic layer deposition (ALD) wherein the temperature of the substrate is varied cyclically during the ALD process. An exemplary temperature schedule for each ALD cycle includes at least one predetermined lower temperature during a diffusion/reaction stage of the cycle, where the lower temperature prevents decomposition of the ALD precursors and further prevents other side reactions, and further includes at least one predetermined higher temperature during a purge stage of the cycle, where the higher temperature enables rapid purging of excess precursor and/or byproducts produced during the reaction stage of the cycle. The prevention of side reactions ensures that the ALD coating is uniform and has the desired composition with minimal impurities, and the rapid purging ensures reasonable total process time.