Temperature-Sensing Diode Layout With Metal Noise Shielding
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining stable temperature detection accuracy while minimizing chip area and protecting temperature sensing elements from noise and crack development.
Innovation Solution
Incorporating a metal layer between the diode wiring and the semiconductor substrate surface to enhance structural strength and protect the diode wiring and temperature sensing diode from noise, while using a metal layer with higher hardness to prevent crack formation and improve noise resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature sensing diode is disposed close to an active portion to improve temperature detection accuracy, then measurement precision is improved, but the diode wiring becomes susceptible to noise from the active portion
Solution Approach 1:
The patent divides the semiconductor device into distinct functional regions by introducing a first isolation region between the active portion and the temperature sensing diode. This segmentation physically separates the noise-generating active portion from the sensitive temperature sensing diode, allowing them to be disposed close together while preventing noise interference. The isolation region acts as a barrier that segments the electrical and electromagnetic environment.
Solution Approach 2:
The patent introduces an intermediary structure (the first isolation region and second isolation region) between the active portion and the temperature sensing diode. These isolation regions serve as mediators that allow the temperature sensing diode to be positioned close to the active portion for accurate temperature detection while blocking noise propagation. The intermediary regions provide both electrical isolation and physical separation.
2Area of stationary object
If the chip area is minimized to reduce device size, then area of stationary object is reduced, but the temperature sensing diode becomes more vulnerable to cracks and noise
Solution Approach 1:
The patent employs a nested structure where the temperature sensing diode and its wiring are positioned within or adjacent to the active portion area, with isolation regions nested between them. This nesting allows the temperature sensing function to be integrated within the existing chip footprint without requiring additional external area, while the isolation regions provide protective barriers against cracks and noise within the compact structure.
Solution Approach 2:
The patent addresses crack resistance by introducing isolation regions that extend in vertical cross-section through the chip structure. This dimensional approach creates barrier layers that span across potential crack propagation paths, preventing cracks from easily spreading between the active portion and the temperature sensing diode, thereby enhancing reliability without increasing planar chip area.
3Reliability
If a metal layer is added to protect the diode wiring from noise and enhance structural strength, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent makes the isolation regions multi-functional by designing them to simultaneously provide electrical isolation, mechanical support, and noise shielding. The first isolation region and second isolation region serve multiple purposes: they electrically isolate the active portion from the temperature sensing diode, provide structural support to prevent cracks, and act as barriers against noise propagation. This multi-functionality reduces the need for additional dedicated noise shielding layers.
Solution Approach 2:
The patent employs composite structures where the isolation regions are formed with multiple material layers having different properties. The first isolation region and second isolation region use different materials optimized for specific functions: one material provides excellent electrical isolation, another provides mechanical strength and crack resistance, and the structure collectively provides noise shielding. This composite approach achieves enhanced reliability without requiring a separate metal shielding layer.
Data Source
AI summary
Provided is a semiconductor device including a semiconductor substrate, where the semiconductor substrate has: a temperature sensing diode provided above an upper surface of the semiconductor substrate; a diode wiring provided above the upper surface of the semiconductor substrate and connected to the temperature sensing diode; a metal layer provided in at least part of a region between the diode wiring and the upper surface of the semiconductor substrate; a first interlayer dielectric film provided between the metal layer and the upper surface of the semiconductor substrate; and a second interlayer dielectric film provided between the diode wiring and the metal layer.