Temperature Detecting Diode With Vertical Capacitive Region
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Solution Overview
Problem
MOS semiconductor devices have low static electricity resistance due to the limitations of existing diode structures, leading to increased leakage current and on-resistance, which raises costs and reduces the active region area.
Innovation Solution
A semiconductor device with a temperature detecting diode and protective diodes is designed, where capacitive component regions are formed below the diodes, using insulating films to improve static electricity resistance without reducing the active region area, by incorporating polysilicon layers and strategically placing conductive and insulating layers to enhance capacitance and insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing diode structures are used in MOS semiconductor devices, then the device can provide overheat protection function, but the static electricity resistance is low leading to increased leakage current and on-resistance
Solution Approach 1:
The patent introduces a capacitive component region formed by insulating films in the vertical dimension below the diode structure. This adds a new dimensional element (thickness direction) to the traditional planar diode configuration, creating a capacitor that operates in the vertical space without occupying lateral area. The insulating film layer between the diode and substrate forms this capacitive region, effectively utilizing the third dimension to improve static electricity resistance while maintaining the active region area.
Solution Approach 2:
The patent employs composite material structures by combining semiconductor layers with insulating film materials to create the capacitive component region. The insulating film (such as oxide films) is integrated with the semiconductor substrate and diode structure, forming a composite system that provides both the diode's protection function and the capacitor's energy storage function. This composite structure enhances static electricity resistance without increasing leakage current.
2Reliability
If existing diode structures are used in MOS semiconductor devices, then the device can provide overheat protection function, but the active region area is reduced due to increased on-resistance
Solution Approach 1:
The capacitive component region is formed in the vertical dimension (thickness direction) below the diode, utilizing space that would otherwise be unused. By placing the capacitor in the vertical direction rather than expanding it laterally, the patent maintains the active region area while providing the necessary capacitance for improved static electricity resistance. The insulating film thickness and lateral dimensions of the diode are optimized to achieve this space-efficient design.
3Reliability
If protective diodes are added to MOS semiconductor elements, then overheat protection is provided, but leakage current increases and on-resistance increases
Solution Approach 1:
The patent creates a composite structure where the protective diode is integrated with a capacitive component region formed by insulating films. This composite diode-capacitor structure provides overheat protection while the capacitor component helps manage voltage transients and reduces the effective on-resistance. The insulating film material and its configuration are specifically designed to work synergistically with the diode structure to minimize harmful effects.
4Reliability
If capacitive component regions are formed below diodes using insulating films, then static electricity resistance is improved, but device structure becomes more complex
Solution Approach 1:
The patent merges the diode structure with the capacitive component region into a single integrated structure. The insulating film that serves as part of the diode structure also forms the capacitor, eliminating the need for separate capacitor components. This merging approach reduces structural complexity while maintaining the improved static electricity resistance, as the same insulating film layer serves dual purposes: as part of the diode and as the capacitive element.
Solution Approach 2:
The insulating film in the capacitive component region performs multiple functions: it provides electrical insulation for the diode, forms the capacitive element for energy storage, and contributes to the overall structural integrity of the device. This multi-functionality reduces the need for additional components and simplifies the overall device structure while achieving improved static electricity resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves the static electricity resistance of both temperature detecting diodes and protective diodes, reducing leakage current and on-resistance while maintaining the active region area, thus enhancing the overall performance and cost-effectiveness of the semiconductor device.
Implementation Method 1
A first capacitor that has the second insulating film between the first-conductivity-type layer and the conductive layer as a first capacitive component region is formed. A second capacitor that has the second insulating film between the second-conductivity-type layer and the conductive layer as a second capacitive component region is formed.
Implementation Method 2
a diode that is connected to the semiconductor element... A first-conductivity-type layer and a second-conductivity-type layer that are formed on the first insulating film
Data Source
AI summary
A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode.