Temperature-Based Pre-Charge Control in Multi-Pass Memory Programming
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Solution Overview
Problem
Existing non-volatile memory programming techniques face challenges in reducing program disturb and resource utilization, particularly during multi-pass programming operations, due to variations in operating temperature.
Innovation Solution
A method is introduced that adjusts the spike pre-charge voltage based on the operating temperature of the memory device, applying a higher voltage when temperatures are high and a lower voltage when temperatures are low, to protect neighbor word lines during pre-charge operations in a multi-pass programming sequence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a fixed high spike pre-charge voltage is applied to protect neighbor word lines during multi-pass programming, then program disturb is reduced, but resource utilization deteriorates due to unnecessary resource consumption at low temperatures
Solution Approach 1:
The patent applies dynamic adjustment of the spike pre-charge voltage based on operating temperature. The voltage is varied between a first voltage level at low temperatures and a second voltage level at high temperatures, allowing the system to adapt to changing thermal conditions and optimize both program disturb reduction and resource utilization
Solution Approach 2:
The patent changes the voltage parameter based on temperature conditions. By monitoring operating temperature and adjusting the spike pre-charge voltage accordingly, the system maintains effective program disturb protection while minimizing unnecessary resource consumption when thermal conditions permit
2Use of energy by moving object
If temperature-based voltage adjustment is implemented, then resource utilization is optimized, but device complexity increases due to temperature monitoring and voltage selection logic
Solution Approach 1:
The patent determines the operating temperature before executing the programming operation and selects the appropriate spike pre-charge voltage in advance. This preliminary assessment allows the system to configure optimal voltage levels before programming begins, simplifying the control logic by making voltage selection a predetermined step rather than a continuous adjustment mechanism
Data Source
AI summary
The present disclosure is related to a programming technique for a memory device that includes a plurality of memory cells arranged in a plurality of word lines. An operating temperature of the memory device is determined. A spike pre-charge voltage is selected based on the operating temperature of the memory device. A first word line and a second word line are programmed in a first programming pass of a multi-pass programming operation. After the first programming pass is completed on the first and second word lines, the first word line is further programmed in a second programming pass that includes a plurality of program loops with pre-charge operations. The spike pre-charge voltage is applied to the second word line during each pre-charge operation.