Temperature Sensor Circuit Partitioning for Low-Voltage IC Nodes
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Solution Overview
Problem
Existing temperature sensor circuits in integrated circuit (IC) devices face challenges such as incompatibility with new technologies, high power consumption, and integrity issues due to high voltage stress, especially as transistor sizes shrink and operating voltages decrease.
Innovation Solution
The integration of a temperature sensor circuit within an IC device that utilizes transistors with vertically stacked horizontal channels, allowing for improved gate control and operation at low power supply potentials. This design includes a first circuit portion formed using older process technology and a second circuit portion using advanced process technology, ensuring compatibility and reducing footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the operating voltage of the temperature sensor is increased to enable operation, then the temperature sensor can function, but the transistors experience high voltage stress and integrity problems
Solution Approach 1:
The temperature sensor circuit is divided into two separate circuit portions: a first circuit portion formed using older process technology and a second circuit portion formed using advanced process technology. This segmentation allows each portion to operate at appropriate voltage levels for its technology node, preventing high voltage stress on advanced transistors while enabling the temperature sensing function.
Solution Approach 2:
The first circuit portion acts as an intermediary that interfaces between the advanced process technology second circuit portion and the rest of the IC device. It converts or adapts signals and voltages appropriately, allowing the sensitive advanced transistors to operate at low voltages while still enabling temperature sensing functionality.
2Area of moving object
If transistor sizes are made smaller to improve integration, then more transistors can be packed, but temperature sensor circuits may not operate properly
Solution Approach 1:
Different regions of the temperature sensor circuit are assigned different technology processes: the first circuit portion uses older process technology with larger, more robust transistors suitable for temperature sensing, while the second circuit portion uses advanced process technology for compact integration. This local differentiation allows small overall footprint while maintaining operational reliability.
3Adaptability or versatility
If advanced process technology is used for the entire temperature sensor circuit, then integration with new IC technology is improved, but the active footprint increases
Solution Approach 1:
The temperature sensor circuit is segmented into two portions formed using different process technologies. The second circuit portion uses advanced process technology to match the IC device technology node, ensuring compatibility. The first circuit portion uses older process technology optimized for low-footprint temperature sensing functions, reducing overall active footprint while maintaining compatibility.
Data Source
AI summary
An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.