Semiconductor Temperature Sensor Layout for Accurate Hotspot Detection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in accurately detecting temperature, particularly when heat is generated by transistor and diode sections, leading to inaccuracies in temperature sensing and protection mechanisms.
Innovation Solution
The semiconductor device incorporates a temperature sensing section adjacent to both transistor and diode sections, with specific patterns and arrangements of neighboring and non-neighboring diode and transistor sections, allowing for improved temperature detection accuracy by optimizing heat influence on the sensing section.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the temperature sensing section is placed adjacent to both transistor and diode sections, then the temperature detection accuracy is improved, but the device complexity increases due to multiple neighboring and non-neighboring sections with different patterns
Solution Approach 1:
The diode sections are divided into neighboring diode sections (adjacent to the temperature sensing section) and non-neighboring diode sections (not adjacent to the temperature sensing section). This segmentation allows different portions of the device to serve different functions: neighboring sections contribute to temperature sensing while non-neighboring sections provide reference measurements, thereby improving temperature detection accuracy without requiring the entire device to have complex arrangements.
Solution Approach 2:
Different regions of the semiconductor device are assigned different functions and structures. The neighboring diode sections have specific patterns optimized for temperature sensing proximity, while non-neighboring diode sections have different patterns suitable for reference measurements. This local differentiation allows each region to be optimized for its specific purpose, improving overall measurement precision while maintaining manageable device complexity through functional zoning.
2Reliability
If multiple diode sections with different patterns are arranged around the temperature sensing section, then the reliability of temperature-based protection mechanisms is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The diode sections are segmented into neighboring and non-neighboring groups with different patterns. This segmentation allows the manufacturing process to focus on creating distinct functional zones rather than requiring uniform high-precision arrangements throughout the entire device. The neighboring sections can be manufactured with precision optimized for temperature sensing, while non-neighboring sections can use simpler patterns that are easier to manufacture with standard precision tolerances.
Solution Approach 2:
Different manufacturing precision levels can be applied to different regions. The neighboring diode sections adjacent to the temperature sensing section can be manufactured with higher precision to ensure accurate temperature measurement, while non-neighboring diode sections can be manufactured with standard precision. This local quality approach improves protection mechanism reliability where it matters most while reducing overall manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the accuracy of temperature detection, enabling effective protection against overheating by accurately sensing the maximum temperature generated by both transistor and diode sections, thereby improving the operational reliability of the semiconductor device.
Implementation Method 1
a temperature sensing section; a neighboring transistor section adjacent to the temperature sensing section; a neighboring diode section adjacent to the temperature sensing section
Data Source
AI summary
A semiconductor device including a transistor section and a diode section, the semiconductor device having: a temperature sensing section; a neighboring transistor section adjacent to the temperature sensing section; a neighboring diode section adjacent to the temperature sensing section; and a first non-neighboring diode section that is not adjacent to the temperature sensing section, wherein the first non-neighboring diode section has a pattern different from the pattern of the neighboring diode section in the top view is provided.