Temperature Sensor Circuit Layout for Low-Stress 3D IC Integration
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Solution Overview
Problem
Temperature sensor circuits in integrated circuit devices face challenges with accurate temperature determination due to high voltage stress and incompatibility with new technologies, leading to integrity issues and increased active footprint.
Innovation Solution
The integration of a temperature sensor circuit with vertically stacked horizontal channels and a reference voltage generator, using a pump circuit to provide a boosted power supply potential, allowing the circuit to operate at a lower voltage and maintain integrity while being compatible with advanced technologies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the operating voltage of the temperature sensor is increased to enable operation, then the temperature sensor can operate, but the transistors experience high voltage stress and integrity problems occur
Solution Approach 1:
The patent introduces a pump circuit that generates a boosted power supply potential (higher voltage) specifically for the temperature sensor circuit, separating the voltage domains. The main IC operates at low voltage (0.5V) while the temperature sensor can operate at higher voltage (1.0V or more) without affecting the integrity of the main device transistors.
Solution Approach 2:
The pump circuit acts as an intermediary that provides the boosted voltage to the temperature sensor circuit. This mediator allows the temperature sensor to access higher voltage for operation while the main IC remains protected at low voltage, resolving the conflict between operational requirements and voltage stress constraints.
2Adaptability or versatility
If the temperature sensor circuit structure is updated to be compatible with new technology, then compatibility with advanced technologies is achieved, but the active footprint of the integrated circuit device increases
Solution Approach 1:
The patent employs vertically stacked horizontal channels in the temperature sensor circuit, transitioning from planar to three-dimensional architecture. This vertical stacking allows the circuit to be compatible with advanced technology nodes while minimizing the lateral footprint on the integrated circuit device.
Data Source
AI summary
An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.