Temperature Sensor Circuit Layout for Stacked-Channel ICs
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Solution Overview
Problem
Temperature sensor circuits in integrated circuit devices face challenges with accurate temperature determination due to high voltage stress and incompatibility with new technologies, leading to integrity issues and increased active footprint.
Innovation Solution
The integration of a temperature sensor circuit with vertically stacked horizontal channels operating at a low power supply potential, utilizing a combination of different process technologies for the transistors and temperature sensor components, and employing a reference voltage generator and step-down circuits to provide temperature signals without overstressing the gate insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the operating voltage of the temperature sensor is increased to enable operation, then the temperature sensor can operate, but the transistors experience high voltage stress causing integrity problems
Solution Approach 1:
The temperature sensor circuit is segmented into two distinct portions: a first circuit portion formed using first process technology and a second circuit portion formed using second process technology. This segmentation allows each portion to be optimized for its specific voltage requirements, with the second portion operating at a higher voltage that would otherwise stress transistors in the first portion.
Solution Approach 2:
Different process technologies are applied to different portions of the temperature sensor circuit based on their specific requirements. The first circuit portion uses first process technology optimized for low-voltage operation, while the second circuit portion uses second process technology optimized for high-voltage operation, allowing each region to have the appropriate characteristics for its function.
2Adaptability or versatility
If new technology is used for transistors, then device compatibility is improved, but temperature sensor circuit structures become incompatible and consume more active footprint
Solution Approach 1:
The temperature sensor circuit is designed to work with transistors having vertically stacked horizontal channels, which is a universal structure in modern integrated circuits. By using this common transistor architecture, the temperature sensor can be integrated with various device technologies without requiring specialized structures, thereby improving compatibility while maintaining a compact footprint.
3Productivity
If transistor size is reduced, then device integration is improved, but temperature sensor circuits cannot operate properly
Solution Approach 1:
The invention moves the temperature sensor operation to a different voltage dimension by using a higher voltage for the second circuit portion. This allows the temperature sensor to function properly even when transistor sizes are reduced for better integration, as the higher voltage compensates for the smaller device dimensions and maintains adequate signal levels for sensing operation.
Data Source
AI summary
An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.