Semiconductor Template Pattern Formation via Selective Sidewall Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional template manufacturing methods for semiconductor devices face challenges in forming device patterns and alignment marks simultaneously, often resulting in insufficient alignment signal intensity due to subdivision of alignment marks during sidewall processing.
Innovation Solution
A pattern forming method and template manufacturing process that involves forming resist patterns with different plasma resistances on a quartz substrate, using electron beam lithography and Atomic Layer Deposition to create core material patterns and alignment marks, allowing for simultaneous processing and ensuring sufficient alignment signal intensity without subdividing alignment marks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sidewall processing is applied to template manufacturing, then device patterns can be formed, but alignment marks are subdivided resulting in insufficient alignment signal intensity
Solution Approach 1:
The patent segments the template manufacturing process into distinct regions: a first region containing device patterns formed through sidewall processing, and a second region containing alignment marks formed without sidewall processing. This spatial segmentation allows different processing methods to be applied to different functional elements, preserving alignment mark integrity while enabling device pattern formation.
Solution Approach 2:
The patent applies local quality by treating different regions of the template differently: the first region (device pattern area) undergoes sidewall processing, while the second region (alignment mark area) is protected from sidewall processing. This localized differentiation ensures that alignment marks maintain their original structure and signal intensity while device patterns are properly formed.
2Productivity
If alignment marks are subdivided during processing, then device patterns can be formed, but alignment processing cannot be executed due to insufficient signal intensity
Solution Approach 1:
The patent divides the template into functionally distinct regions: a first region for device patterns and a second region for alignment marks. This segmentation allows the alignment marks to remain intact and provide sufficient signal intensity for alignment processing, while device patterns are formed efficiently through sidewall processing in the first region.
Solution Approach 2:
The patent introduces a region division as an intermediary mechanism that mediates between the conflicting requirements of device pattern formation and alignment mark preservation. By establishing distinct first and second regions with different processing characteristics, the system enables both device pattern efficiency and alignment processing ease to coexist.
3Ease of manufacture
If conventional template manufacturing is used, then simple processes are available, but device patterns and alignment marks cannot be formed through the same process
Solution Approach 1:
The patent creates a universal template manufacturing process that can simultaneously form both device patterns and alignment marks through a single integrated flow. The method uses a common resist film and core material formation process, then applies selective removal and sidewall processing to different regions, enabling one process to accomplish multiple pattern formation tasks that would otherwise require separate operations.
Solution Approach 2:
The patent merges the formation of device patterns and alignment marks into a single integrated process. By forming both patterns from the same resist film and core material, and using a unified processing sequence with region-specific operations, the patent combines what would traditionally be separate manufacturing steps into one cohesive process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of device patterns and alignment marks with varying widths in the same process, achieving sufficient alignment signal intensity and arbitrary alignment mark sizes, thereby improving the manufacturing efficiency of templates for semiconductor devices.
Implementation Method 1
forming a resist film including a first core material pattern and a second core material pattern on a first film laminated on a substrate
Implementation Method 2
forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern
Implementation Method 3
forming a second film at least on sidewalls of the first and second core material patterns
Data Source
AI summary
According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.