Template Pattern Splitting for Sub-100 nm Line Widths

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Solution Overview

Problem

Current methods for manufacturing templates, such as electron beam direct writing and laser direct writing, face challenges in achieving high fineness while maintaining production efficiency, as they struggle to further reduce line width and enhance pattern density effectively.

Innovation Solution

A method involving the formation of photoresist patterns on a base, where a material layer is used as an etch mask to create sub-patterns, allowing for repeated patterning to achieve finer line widths and increased pattern density, ultimately resulting in a template with line widths less than 100 nm.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional methods (electron beam direct writing, laser direct writing) are used for template manufacturing, then production efficiency is maintained, but line width reduction and pattern density enhancement are limited

Engineering Contradiction:
Improveline widthVSAvoidproduction efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies segmentation by dividing the pattern formation process into multiple stages: first forming initial photoresist patterns, then using material layers as etch masks to create sub-patterns, and repeating the process to achieve progressively finer line widths. This multi-stage segmentation enables line width reduction below 100 nm while maintaining production efficiency through parallel processing capabilities.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If material layer is used as etch mask to create sub-patterns through repeated patterning, then line width is reduced and pattern density is increased, but process complexity increases

Engineering Contradiction:
Improvepattern densityVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent employs dimensionality change by utilizing the vertical dimension (thickness direction) to solve planar pattern density issues. Material layers are deposited and patterned in the vertical dimension, then used as etch masks to define sub-patterns in the horizontal plane. This approach increases pattern density without proportionally increasing process complexity, as the vertical layering enables efficient use of each patterning step.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the fineness of the template by reducing line width and increasing pattern density, overcoming the limitations of existing methods by producing templates with improved resolution and efficiency.

Implementation Method 1

a photoresist layer is formed on the base; the photoresist layer is exposed through a mask, so that a photoresist pattern is formed on the base

Methodology Applied
Scientific EffectPhotopolymerization: Photopolymerisation

Implementation Method 2

a material layer is formed on the photoresist pattern

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 3

a material layer is formed on the photoresist pattern

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 4

the photoresist pattern is etched by using the material layer as an etch mask, so that the photoresist pattern is formed into a plurality of photoresist sub-patterns

Methodology Applied
Scientific EffectEtching:

Data Source

PatentEP3907562B1Template preparation method
Publication Date: 2024.05.15 BOE TECHNOLOGY GROUP CO LTD
  • EP3907562B1 patent drawingFigure 1A(a)~1B(b)
  • EP3907562B1 patent drawingFigure 1C~1D(b)
  • EP3907562B1 patent drawingFigure 1E(a)~1F(b)

AI summary

A template preparation method, comprising: providing a substrate (100); forming a photoresist pattern (200) on the substrate (100); and patterning the substrate (100) by using the photoresist pattern (200) as a mask. In addition, said forming a photoresist pattern (200) comprising: forming, on the substrate (100), a plurality of first patterns (210) arranged at intervals; forming a first material layer (300) on the plurality of first patterns (210); patterning at least one first pattern (210) by using the first material layer (300) as a mask, so as to enable the first pattern (210) to form at least one first sub-pattern (211); and removing the first material layer (300), the first material layer (300) at least covering, in a direction perpendicular to a plane where the substrate (100) is located, one side of the at least one first pattern (210). The method above can improve the fineness of a template.