Template Substrate Mask Layout for ELO Shape Isolation
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Solution Overview
Problem
Existing semiconductor fabrication methods using epitaxial lateral overgrowth (ELO) face challenges in maintaining the shape and reducing dislocation density of semiconductor parts, particularly due to the propagation of shape disorders from the peripheral to the non-peripheral portions of the substrate.
Innovation Solution
A template substrate with a specific mask pattern design, including first and second opening portions, is used to facilitate the growth of semiconductor parts by epitaxial lateral overgrowth, where the second opening portions along the edge act as a sacrificial layer to isolate and secure the shape of the first semiconductor part, reducing dislocation inheritance and shape propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional mask pattern is used without edge opening portions, then the manufacturing process is simple, but shape disorders propagate from peripheral to non-peripheral portions causing poor shape control and high dislocation density
Solution Approach 1:
The mask pattern is segmented into three distinct regions: a mask portion for defining the main semiconductor part, first opening portions for forming the primary semiconductor structures, and second opening portions arranged along the edge for forming sacrificial layers. This segmentation allows each region to perform its specific function independently, enabling shape control without propagating disorders from peripheral to non-peripheral portions.
Solution Approach 2:
The sacrificial layer formed in the second opening portions acts as an intermediary element between the peripheral edge and the main semiconductor part. This sacrificial layer prevents shape disorders from propagating inward, serving as a buffer zone that protects the primary semiconductor structures while allowing the mask pattern to remain relatively simple.
2Productivity
If the peripheral portion is used for semiconductor part formation, then the substrate utilization is high, but dislocation density increases due to shape disorder propagation
Solution Approach 1:
The harmful peripheral region is extracted and isolated by forming sacrificial layers in the second opening portions along the edge. This separates the peripheral portion from the main semiconductor part formation area, allowing the peripheral region to be used for substrate utilization while preventing dislocation propagation into the high-quality non-peripheral portions.
Solution Approach 2:
Different regions of the substrate are assigned different functions: the peripheral portion with second opening portions is dedicated to forming sacrificial layers for shape control, while the non-peripheral portion with first opening portions is dedicated to forming high-quality semiconductor parts. This local differentiation allows each region to optimize its specific function without compromising the other.
3Reliability
If no sacrificial layer is formed, then the manufacturing process is short, but shape disorders propagate causing poor quality semiconductor parts
Solution Approach 1:
The sacrificial layer is formed in advance during the epitaxial growth process in the second opening portions before the main semiconductor part formation is completed. This preliminary action establishes the shape control boundaries early, preventing disorder propagation throughout the subsequent manufacturing steps, thereby ensuring high quality without significantly extending the overall cycle time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively secures the shape of the first semiconductor part by using the second semiconductor part as a sacrificial layer, reducing dislocation density and preventing shape disorders from affecting the first semiconductor part, thereby enhancing the quality and integrity of the semiconductor layers.
Implementation Method 1
a method of forming a plurality of semiconductor parts, each of the plurality of semiconductor parts corresponding to a respective one of a plurality of opening portions of a mask by using an epitaxial lateral overgrowth (ELO) method
Data Source
AI summary
A template substrate includes: a main substrate including an edge (E), a peripheral portion including the edge, and a non-peripheral portion located on the inner side of the peripheral portion; and a mask pattern located above the main substrate. The mask pattern includes a mask portion, a plurality of first opening portions (KF) each having a width direction as a first direction and a longitudinal direction as a second direction and overlapping the non-peripheral portion in plan view, and one or more second opening portions (KB) arranged along the edge in plan view.