Temporary Fixing Film for Clean Semiconductor Debonding
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Solution Overview
Problem
The generation of resin residue on semiconductor members during the separation process from a temporary fixing material layer is a challenge in semiconductor device manufacturing.
Innovation Solution
A method involving a laminated body with a support substrate, a light-absorbing layer, and a resin layer for temporary fixing, where the resin layer is separated from the semiconductor member using light irradiation, and a film material with specific release films is used to minimize resin residue by controlling the peel strengths and viscosities of the release film surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor member is temporarily fixed to a support member using a resin layer for temporary fixing and then separated by light irradiation, then the semiconductor member can be processed in a temporarily fixed state, but resin residue remains on the semiconductor member after separation
Solution Approach 1:
The invention divides the temporary fixing material into multiple functional layers: a resin layer for temporary fixing and a light-absorbing layer. The light-absorbing layer is positioned between the light source and the resin layer, causing it to absorb light energy and generate heat preferentially. This segmentation allows the light-absorbing layer to undergo phase change and separate from the resin layer first, while the resin layer remains intact and can be cleanly removed without residue.
Solution Approach 2:
The light-absorbing layer is designed to undergo phase transition when exposed to light. The light-absorbing layer absorbs light energy and transitions from a solid state to a melted or vaporized state, creating a clear separation interface between the light-absorbing layer and the resin layer. This phase transition enables clean separation without leaving resin residue on the semiconductor member.
2Strength
If the resin layer for temporary fixing is made to have strong adhesion to ensure reliable temporary fixing, then the semiconductor member is securely fixed, but the resin layer becomes difficult to separate completely
Solution Approach 1:
The invention creates different adhesion characteristics at different interfaces. The resin layer for temporary fixing has strong adhesion to the semiconductor member surface, ensuring secure temporary fixing. However, the interface between the light-absorbing layer and the resin layer is designed to have weaker adhesion, allowing this interface to separate first during light irradiation. This local differentiation of adhesion properties enables both strong temporary fixing and easy final separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the generation of resin residue on semiconductor members, ensuring clean separation and reducing potential damage during the manufacturing process.
Implementation Method 1
irradiating the laminated body for temporary fixing with light from the back surface side
Data Source
AI summary
A method for manufacturing a semiconductor device, the method including irradiating a laminated body for temporary fixing with light and thereby separating the semiconductor member from a resin layer for temporary fixing. The laminated body for temporary fixing is formed by a method including: laminating a film material for temporary fixing on a light-absorbing layer in a direction in which a first principal surface is in contact with the light-absorbing layer; and peeling off a second release film from the film material for temporary fixing to expose a second principal surface. When the maximum values of logarithmic decrements of the first principal surface and the second principal surface of the resin layer for temporary fixing in rigid pendulum measurement are designated as δmax1 and δmax2, respectively, δmax2 is smaller than δmax1.