TeraMOS Sensor Monolithic CMOS-SOI MEMS Integration
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Solution Overview
Problem
Current THz imaging technologies face challenges in achieving low-cost, high-performance imaging systems, particularly in the 0.5-1.5 THz range, due to high costs and limited sensitivity of existing solutions, which restrict their deployment in applications like medical clinics and surveillance.
Innovation Solution
The development of a TeraMOS sensor integrating CMOS-SOI-MEMS transistors with thermal isolation and readout circuitry, utilizing MEMS post-processing to reduce costs and enhance performance, allowing for a monolithic focal plane array with variable effective pixel size and low-noise readout circuitry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional THz imaging technologies are used, then imaging capability is achieved, but system cost becomes high and sensitivity is limited
Solution Approach 1:
The patent combines three leading technologies (CMOS-SOI, MEMS post-processing, and THz photonics) into a single integrated sensor platform. The CMOS-SOI readout circuitry is monolithically integrated with the THz-sensitive sensor elements, eliminating the need for separate expensive THz sources and detectors while achieving high sensitivity through synergistic integration of these technologies.
Solution Approach 2:
The developed sensor platform serves multiple functions: it can perform both passive and active THz imaging, operates across a broad frequency range (0.5-1.5 THz), and can be configured for different applications (medical imaging, surveillance, material testing). This multi-functionality reduces the need for multiple specialized systems, thereby lowering overall cost while maintaining high performance.
2Measurement precision
If passive imaging is implemented, then covert surveillance and better range are achieved, but stringent sensitivity requirements and sensitivity to external conditions occur
Solution Approach 1:
The patent introduces an integrated readout circuitry layer as an intermediary between the THz sensor elements and the external environment. This CMOS-SOI readout circuitry acts as a buffer that processes and amplifies the微弱 THz signals while shielding them from external electromagnetic interference and environmental conditions, thereby maintaining high sensitivity without vulnerability to external factors.
3Measurement precision
If focal plane array architecture is used for passive imaging, then imaging capability is improved, but system cost increases significantly
Solution Approach 1:
The patent merges the THz sensor array with CMOS-SOI readout circuitry on a single focal plane array substrate. This integration eliminates the need for separate expensive THz components and interconnections, allowing the focal plane array to be manufactured using standard CMOS fabrication processes, thereby achieving high imaging performance at reduced cost.
Solution Approach 2:
The patent replaces traditional mechanical or separate electronic integration methods with monolithic CMOS-SOI integration. By using semiconductor fabrication processes to create both the sensor elements and readout circuitry on the same chip, the system eliminates complex assembly and interconnection requirements, significantly reducing manufacturing cost while maintaining high imaging performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The TeraMOS system achieves breakthrough performance with high sensitivity and low cost, enabling efficient detection of terahertz radiation, suitable for medical and surveillance applications, with improved noise reduction and temperature sensitivity.
Implementation Method 1
A thermally isolated micro-machined (released) CMOS transistor, operating at sub-threshold, as an active device for thermal sensing
Implementation Method 2
The thermal isolation is based on Technion-Israel Institute of Technology unique MEMS post-processing technology
Data Source
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Figure 2b~2c
AI summary
A TeraMOS sensor based on a CMOS-SOI-MEMS transistor, thermally isolated by the MEMS post-processing, designed specifically for the detection of THz radiation which may be directly integrated with the CMOS-SOI readout circuitry, in order to achieve a breakthrough in performance and cost. The TeraMOS sensor provides a low-cost, high performance THz passive or active imaging system (roughly in the range of 0.5-1.5THz) by combining several leading technologies: Complementary Metal Oxide Semiconductor (CMOS)-Silicon on Insulator (SOI), Micro Electro Mechanical Systems (MEMS) and photonics. An array of TeraMOS sensors, integrated with readout circuitry and driving and supporting circuitry provides a monolithic focal plane array or imager. This imager is designed in a commercial CMOS-SOI Fab and the MEMS micromachining is provided as post-processing step in order to reduce cost. Thus the CMOS transistors and technology provide the sensors as well as the signal processing and additional readout circuitry both in the pixels as well as around the sensor array.