Connection Terminal Coupling Structure for Semiconductor Heat Dissipation

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Solution Overview

Problem

Semiconductor apparatuses face reliability issues due to heat generation and thermal stress in connection terminals, which are prone to deterioration as they are miniaturized, limiting effective heat dissipation and thermal capacity.

Innovation Solution

The semiconductor apparatus incorporates a terminal member with a connection terminal that includes a distal end portion bonded to a circuit board, a rising main body portion, and a coupling portion with a larger cross-sectional area than the main body portion, enhancing thermal dissipation by increasing the terminal's volume without increasing its size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the connection terminal is miniaturized to reduce apparatus size, then the apparatus size is reduced, but heat generation increases and reliability deteriorates

Engineering Contradiction:
Improveapparatus sizeVSAvoidterminal reliability
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent introduces a coupling portion with a cross-sectional area perpendicular to the current path that is larger than that of the main body portion. This dimensional change in the cross-section (not length) allows increasing the thermal capacity and heat dissipation area without increasing the overall length or external dimensions of the terminal, thus resolving the contradiction between miniaturization and heat dissipation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The coupling portion is designed with a locally enlarged cross-sectional area specifically at the region where thermal dissipation is most needed (near the bonding interface with the circuit board). This local quality enhancement focuses thermal management resources where they are most effective, improving terminal reliability without requiring overall terminal enlargement.

Inventive Principle:
Principle #3Local quality

2Reliability

If the connection terminal volume is increased to improve heat dissipation, then thermal capacity increases, but the apparatus size increases

Engineering Contradiction:
Improvethermal capacityVSAvoidterminal volume
Core Design Contradiction:
ReliabilityVSVolume of moving object

Solution Approach 1:

Instead of increasing the terminal volume by extending its length or overall dimensions, the patent enlarges the cross-sectional area of the coupling portion perpendicular to the current path. This approach increases the thermal capacity and heat dissipation capability while maintaining the same external dimensions and occupying the same space, thus resolving the contradiction between thermal capacity and apparatus size.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Temperature

If the connection terminal cross-sectional area is increased to reduce heat generation, then heat dissipation improves, but the terminal size increases

Engineering Contradiction:
Improveheat generationVSAvoidterminal cross-sectional area
Core Design Contradiction:
TemperatureVSArea of moving object

Solution Approach 1:

The patent applies local quality enhancement by enlarging the cross-sectional area specifically at the coupling portion where thermal dissipation is most critical, rather than uniformly increasing the cross-sectional area of the entire terminal. This localized approach improves heat dissipation at the heat-generating region without proportionally increasing the overall terminal size.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively prevents heat generation in the connection terminal, thereby enhancing the reliability of the semiconductor apparatus by improving thermal capacity and heat dissipation.

Implementation Method 1

The coupling portion has a larger cross-sectional area perpendicular to a current path than that of a portion, to which the coupling portion is coupled, of the main body portion... enhance thermal dissipation by increasing the terminal's volume

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

Connection terminals to be connected to the inside of the apparatus from the output terminals in the U, V, and W phases and the respective PN terminals in the phases are bonded, for example by ultrasonic connection, to an insulating substrate

Methodology Applied
Scientific EffectUltrasonic bonding: Ultrasonic Vibration

Data Source

PatentUS20230369183A1Semiconductor apparatus and method for manufacturing semiconductor apparatus
Publication Date: 2023.11.16 FUJI ELECTRIC CO LTD
  • US20230369183A1 patent drawing
  • US20230369183A1 patent drawing
  • US20230369183A1 patent drawing

AI summary

A semiconductor apparatus includes an insulating substrate having a circuit board electrically connected to a semiconductor device, and a terminal member having a main terminal and a connection terminal bonded to the circuit board. The connection terminal has at least one distal end portion bonded to the circuit board, a main body portion that rises from the at least one distal end portion and extends toward the main terminal, and a coupling portion having a conductive property and being coupled to the main body portion. The main body portion has a main body coupling portion to which the coupling portion is coupled. A cross-sectional area of the coupling portion perpendicular to a direction in which a current flows in the coupling portion is larger than a cross-sectional area of a main body coupling portion perpendicular to a direction in which a current flows in the main body coupling portion.