Terminal Electrode Recess Structure for Stress-Resistant Semiconductors
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Solution Overview
Problem
Current semiconductor devices with wide bandgap semiconductors face challenges in reliability due to stress-induced failures and electrical characteristic changes, particularly in the formation and protection of terminal electrodes from external forces and humidity.
Innovation Solution
The semiconductor device incorporates a laminated structure with a sealing insulator that covers the gate and source terminal electrodes, reducing their volume and stress, and includes a thick upper insulating film to protect against external forces and humidity, while the terminal electrodes have recessed portions to minimize contact area and stress, enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If terminal electrodes are formed with larger contact area to improve electrical connection, then electrical conductivity is improved, but stress concentration and reliability deteriorate
Solution Approach 1:
The patent applies local quality by creating recessed portions in specific locations of the terminal electrodes (gate and source terminals) rather than uniformly changing the entire electrode structure. These localized recesses reduce stress concentration at critical points while maintaining adequate electrical contact area, thus improving reliability without sacrificing strength
Solution Approach 2:
The patent implements beforehand cushioning by forming protective films (inorganic and organic layers) over the terminal electrodes before they are subjected to stress. These films act as cushioning layers that prevent stress-induced failures and protect against external forces and humidity, thereby improving reliability in advance
2Reliability
If protective films are added to protect terminal electrodes from stress and humidity, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent uses composite materials by combining different types of protective films (inorganic protective film and organic protective film) in a laminated structure. Each layer provides specific protection functions, and their combination creates a synergistic effect that enhances overall reliability while managing the complexity through functional differentiation
Solution Approach 2:
The protective film structure serves multiple functions simultaneously: it protects against mechanical stress, prevents humidity ingress, and provides electrical insulation. This multi-functionality justifies the added structural complexity by delivering comprehensive protection in a integrated manner
3Strength
If terminal electrodes are reduced in volume to reduce stress, then stress resistance is improved, but electrical connection quality may deteriorate
Solution Approach 1:
The patent applies local quality by creating recessed portions in specific locations of the terminal electrodes rather than uniformly changing the entire electrode structure. These localized recesses reduce stress concentration at critical points while maintaining adequate electrical contact area, thus improving reliability without sacrificing strength
Solution Approach 2:
The terminal electrode structure is segmented into different regions: flat portions for electrical contact and recessed portions for stress reduction. This segmentation allows each region to perform its specific function optimally, maintaining electrical connection while reducing overall stress
Data Source
AI summary
A semiconductor device includes a chip having a main surface, a main surface electrode arranged on the main surface, a terminal electrode that has a terminal surface and a terminal side wall, and that has a recessed portion recessed toward the main surface electrode side in the terminal surface, and a sealing insulator that covers a periphery of the terminal electrode on the main surface such as to expose the terminal surface and cover the terminal side wall.