Terminal-to-Metal Layer Interlock for Stronger Semiconductor Joints

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Solution Overview

Problem

Conventional semiconductor devices experience weak joining strength between terminals and metal layers due to reliance on force from press-fitting, leading to potential terminal dislodgment over time.

Innovation Solution

A semiconductor device design featuring a metal layer with a hole having recessed-projecting portions, and a terminal with corresponding recessed-projecting portions, allowing for enhanced mechanical engagement and improved joining strength through deformation of a softer plating layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a terminal is press-fitted to a hole in a metal layer, then the terminal can be joined to the metal layer, but the joining strength is weak and the terminal may fall out after long-term drive

Engineering Contradiction:
Improvejoining strengthVSAvoidholding force
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The invention applies local quality by creating recessed-projecting portions at specific locations within the hole (bottom surface and side surface) rather than uniformly modifying the entire hole structure. These localized structural changes provide enhanced mechanical interlocking precisely where needed, improving holding force without compromising the overall simplicity of the press-fitting process

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The recessed-projecting portions introduce curved and irregular surface geometries within the hole structure. The projecting portions create mechanical interlocking features that prevent terminal dislodgment, while the recessed portions accommodate deformation of the plating layer. This curved surface approach transforms the simple cylindrical hole into a structure with enhanced mechanical engagement capabilities

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Reliability

If a plating layer is provided on the terminal, then the terminal can be joined to the metal layer, but the plating layer deforms and the joining strength is insufficient

Engineering Contradiction:
Improvejoining durabilityVSAvoidmechanical engagement
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The invention utilizes parameter changes by controlling the deformation behavior of the plating layer through the geometric parameters of the recessed-projecting portions. The specific dimensions, depths, and distributions of these portions are optimized to induce controlled plastic deformation of the softer plating layer, creating a interference fit that significantly enhances mechanical engagement and joining durability

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The solution effectively creates a composite structure where the terminal (with plating layer) and metal layer are mechanically integrated through the recessed-projecting portions. The combination of the softer plating layer and harder metal layer, mediated by the geometric features, forms a composite joint that leverages the advantages of both materials for improved reliability

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design significantly enhances the joining strength between the terminal and the metal layer, preventing terminal dislodgment and ensuring long-term reliability.

Implementation Method 1

a plating layer provided on a press-fitting surface of the terminal... through deformation of a softer plating layer

Methodology Applied
Scientific EffectElastic deformation: Elasticity

Implementation Method 2

the recesses and projections continuously formed on a surface of the hole... deformation of a softer plating layer

Methodology Applied
Scientific EffectPlastic deformation: Plasticity

Data Source

PatentUS20250167099A1Semiconductor device and method for manufacturing thereof
Publication Date: 2025.05.22 FUJI ELECTRIC CO LTD
  • US20250167099A1 patent drawing
  • US20250167099A1 patent drawing
  • US20250167099A1 patent drawing

AI summary

A semiconductor device includes: a metal layer including a top surface having a hole including a recessed-projecting portion constituted by recesses and projections continuously formed on a surface of the hole; and a terminal having one end inserted into the hole and extending upward from the top surface of the metal layer. A method for manufacturing a semiconductor device includes: preparing a metal layer having a hole including a recessed-projecting portion constituted by recesses and projections continuously formed on a surface of the hole; preparing a terminal; and joining the terminal to the metal layer by inserting one end of the terminal into the hole.