Flip-Chip Semiconductor Terminal Overhang for Shorter Current Paths
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Solution Overview
Problem
The existing semiconductor devices with flip-chip bonding have a long current path due to the separation distance between electrodes, leading to higher electrical resistance, which affects heat dissipation and mounting reliability.
Innovation Solution
The semiconductor device design includes leads with obverse and reverse surfaces arranged to reduce the distance between electrode terminals, with metal layers and bonding portions to enhance electrical connectivity and reduce current path resistance, while the sealing resin covers the leads and semiconductor element for uniform heat dissipation and improved mounting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the leads are spaced apart at a predetermined distance, then the mounting reliability is improved, but the current path length increases and electrical resistance increases
Solution Approach 1:
The patent applies dimensionality change by extending electrode terminals in the thickness direction (vertical dimension) to overlap with leads horizontally. This allows current to flow vertically through the semiconductor element rather than horizontally across the semiconductor layer, effectively reducing current path length while maintaining lead spacing for reliability.
2Reliability
If the separation distance between first electrodes is increased, then the mounting reliability is improved, but the electrical resistance of the current path increases
Solution Approach 1:
The patent transitions the current path from a horizontal plane to a vertical dimension by having electrode terminals extend through the semiconductor element thickness. This dimensional change allows leads to be spaced farther apart for reliability without increasing current path resistance, as current flows vertically through overlapping electrode-terminal/lead configurations.
3Volume of moving object
If a compact device design is implemented, then the device size is reduced, but the heat dissipation capability may be compromised
Solution Approach 1:
The patent uses vertical stacking with electrode terminals extending in the thickness direction to create overlapping horizontal projections. This three-dimensional arrangement reduces the horizontal footprint of the device while maintaining effective heat dissipation paths through the vertical current flow configuration.
Data Source
AI summary
A semiconductor device A10 includes: a semiconductor element 30 having an element obverse surface 30a and an element obverse surface 30a faces away from each other in a z direction and including an electrode 34 formed on the element obverse surface 30a and an electrode terminal 36A in contact with the electrode 34 and protruding in the z direction; a lead 10A electrically connected to the semiconductor element 30 and having an obverse surface 101 and a reverse surface 102 faces away from each other in the z direction; and a sealing resin 40 covering the semiconductor element 30. The lead 10A includes a body 11 on a side toward the reverse surface 102 with respect to the obverse surface 101. The electrode terminal 36A has a bonding surface 365 facing the lead 10. The bonding surface 365 includes an overhanging portion 365a not overlapping with the body 11 as viewed in the z direction.