Semiconductor Package Terminal Terrace for Stronger Wire Bonding
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Solution Overview
Problem
Existing semiconductor devices face issues with insufficient bonding strength between wires and terminals due to the configuration of the dividing wall, leading to quality loss and decreased reliability.
Innovation Solution
The semiconductor device incorporates a resin case with dividing walls featuring a terrace part on the sidewall, where the wire has a diameter that is at most 0.15 times the width of the bonding part, allowing for improved ultrasonic bonding and increased bonding strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If a terrace part is provided on the dividing wall with a recess formed at a junction with the baseplate, then the terminal can be installed with the wire bonding part disposed on the terrace part, but sufficient wire bonding power cannot be applied to the bonding part due to the shape of the dividing wall, leading to decreased bonding strength
Solution Approach 1:
The patent applies local quality by providing a terrace part at a specific location on the dividing wall where the terminal is to be installed. This terrace part creates a localized flat surface that improves the bonding conditions specifically at the wire bonding part, while the rest of the dividing wall maintains its original structure. The recess is formed locally at the junction with the baseplate to accommodate the terminal, ensuring that the bonding power can be effectively applied to the bonding part without compromising the overall dividing wall structure.
2Strength
If the wire diameter is large relative to the bonding part width, then the bonding part can accommodate the wire, but the bonding strength decreases due to insufficient power application
Solution Approach 1:
The patent applies parameter changes by specifying that the wire diameter should be at most 0.15 times the width of the bonding part in the first direction. This parameter optimization ensures that the bonding part has sufficient width to accommodate the wire while allowing adequate bonding power to be applied. The specific ratio of 0.15 or less is determined to provide the optimal balance between wire accommodation and bonding strength, resolving the contradiction between these two requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures robust bonding between the wire and terminal, enhancing the quality and reliability of the semiconductor device by maintaining high bonding strength even under thermal stress.
Implementation Method 1
a lower end of the dividing wall is fixed to a baseplate via an adhesive
Implementation Method 2
improved ultrasonic bonding and increased bonding strength
Data Source
AI summary
A semiconductor device includes a baseplate and a case which includes an external wall surrounding an internal space and a dividing wall extending in a first direction and separating the space into compartments. The dividing wall has a lower end fixed to the principal surface and includes, on a sidewall, a terrace positioned further away from the principal surface than the lower end and hanging out toward the space compared to the lower end in a second direction parallel to the principal surface and perpendicular to the first direction. A terminal's bonding part, to which a wire is bonded, is disposed on the terrace. A ratio of the wire's diameter to the bonding part's width in the first direction is set to ≤0.15, which prevents a situation where bonding power is not sufficiently applied to the bonding part during ultrasonic bonding of the wire, thus increasing the bonding strength.