Terminal-Modified Resist Underlayer for Defect-Free EUV Patterns
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Solution Overview
Problem
In advanced lithography processes for semiconductor manufacturing, particularly with EUV exposure, forming a thin resist underlayer film without defects and achieving uniformity and rectangular shape of resist patterns is challenging due to substrate surface issues and polymer properties, leading to pinholes and line width roughness.
Innovation Solution
A resist underlayer film-forming composition containing a polymer with an acyclic aliphatic hydrocarbon group at the terminal, optionally interrupted by a heteroatom or substituted, and including a crosslinking agent and curing catalyst, which promotes a uniform and defect-free film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin resist underlayer film is formed for EUV exposure, then the line width of resist pattern can be reduced to 32 nm or less, but pinholes and aggregations occur due to substrate surface influence and polymer properties
Solution Approach 1:
The patent modifies the polymer structure by introducing specific terminal groups (carboxyl, hydroxyl, or amine groups) and controlling molecular weight and composition ratios to change the chemical and physical parameters of the polymer, enabling uniform thin film formation without pinholes while maintaining sub-32nm line width precision
Solution Approach 2:
The patent creates a composite polymer system combining a base polymer with specific terminal functional groups, where the terminal groups provide anchoring to the substrate while the main chain ensures film uniformity, resolving the contradiction between thin film formation and defect prevention
2Manufacturing precision
If the resist underlayer film is made thinner for EUV exposure, then advanced patterning is enabled, but film uniformity deteriorates due to substrate surface effects
Solution Approach 1:
The patent optimizes the molecular weight (5,000-50,000) and terminal group content (5-50% by mass) of the polymer to achieve uniform film composition and thickness, enabling advanced patterning while maintaining film stability through controlled polymer architecture
3Ease of manufacture
If a polymer with high photocuring property is used, then resource efficiency and environmental friendliness improve by omitting photoacid generator, but line width roughness deteriorates
Solution Approach 1:
The patent introduces specific terminal groups (carboxyl, hydroxyl, or amine) with controlled content ratios to moderate the photocuring rate, preventing excessive crosslinking that causes line width roughness while maintaining process simplicity through direct polymer design rather than additive systems
4Manufacturing precision
If the resist underlayer film is formed to be thinner for EUV exposure, then sensitivity is improved, but pattern rectangular shape deteriorates due to pattern collapse
Solution Approach 1:
The patent optimizes the polymer molecular weight and terminal group content to achieve adequate adhesion strength in thin films, preventing pattern collapse while maintaining high sensitivity for EUV exposure through controlled interfacial interactions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of resist patterns with improved rectangular shape and reduced line width roughness, enhancing sensitivity and preventing pattern collapse during EUV lithography.
Implementation Method 1
the composition containing a polymer that contains a repeating unit structure having a polycyclic aliphatic ring in a main chain of the polymer
Data Source
AI summary
A composition for forming a resist underlayer film in which a desired resist pattern can be formed, a method for manufacturing a resist pattern using said composition for forming a resist underlayer film, and a method for manufacturing a semiconductor device. The composition for forming a resist underlayer film includes an organic solvent and a polymer, the polymer containing, at the terminal, a non-cyclic aliphatic hydrocarbon group that may be interrupted by a group including a heteroatom and that may be substituted by a substitution group.