Semiconductor Termination Electrode Layout for Breakdown Control
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Solution Overview
Problem
Power control semiconductor devices face challenges in achieving large breakdown immunity due to difficulties in controlling the breakdown voltage of the termination region and snapback characteristic effectively.
Innovation Solution
The semiconductor device incorporates a semiconductor part with a termination region surrounding an active region, featuring multiple control electrodes and pads, along with insulating films, to control the breakdown voltage and snapback characteristic by adjusting the potentials of the second control electrodes, thereby suppressing impact ionization and enhancing breakdown immunity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional termination region structure is used, then the device structure is simple, but the breakdown immunity is insufficient and snapback characteristic cannot be controlled
Solution Approach 1:
The termination region is divided into multiple segments with different control electrodes (first control electrode, second control electrode, third control electrode) positioned at different locations and depths. Each control electrode independently controls the potential distribution in different zones of the termination region, enabling precise control of breakdown characteristics without requiring complete structural redesign
Solution Approach 2:
The invention introduces vertical control electrodes extending from the front surface into the termination region, adding a vertical dimension to the control mechanism. This multi-dimensional approach (horizontal field plates + vertical control electrodes) enables effective potential control throughout the three-dimensional termination region, improving breakdown immunity without excessive complexity
2Reliability
If the breakdown voltage of termination region is not controlled, then the device structure is simple, but the snapback characteristic deteriorates
Solution Approach 1:
The control electrodes are positioned and biased in advance to pre-establish the desired potential distribution in the termination region before breakdown occurs. By applying appropriate voltages to the control electrodes during normal operation, the potential distribution is maintained to prevent snapback characteristic deterioration
Solution Approach 2:
The invention controls the breakdown voltage by changing the electrical parameters (voltage bias) of the control electrodes. By adjusting the voltage applied to each control electrode, the potential distribution in the termination region is optimized to achieve desired breakdown characteristics and suppress snapback effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases the avalanche breakdown voltage and improves the snapback characteristic, resulting in increased breakdown immunity and improved power control.
Implementation Method 1
The second control electrode provided on the termination region with a second insulating film interposed... by controlling the potential of the second control electrode, avalanche breakdown voltage is increased
Implementation Method 2
influencing the path of hole current and suppressing impact ionization, enhancing breakdown immunity
Data Source
AI summary
A semiconductor device includes a semiconductor part, a first electrode, first and second control electrodes. The first electrode and the first control electrode are provided in an active region. The second control electrode is provided in a termination region. The semiconductor part including first and third layers of a first conductivity type, and second and fourth layers of a second conductivity type. The first layer is provided in the active and termination regions. The second layer is provided between the first layer and the first electrode, and faces the first control electrode via a first insulating film. The third layer is provided between the second layer and the first electrode. The fourth-layers are provided on the first layer in the termination region. The first layer includes a portion extending between the fourth layers. The second control electrode faces the portion of the first layer via a second insulating film.