Ternary Carbide Nitride Semiconductor Contacts
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Solution Overview
Problem
Existing semiconductor devices face challenges in minimizing resistance and improving electrical characteristics, particularly in high-temperature processes, due to limitations in the materials used for contacts and wiring within the semiconductor bulk.
Innovation Solution
Incorporating ternary carbides and nitrides with a melting point greater than 900°C into the semiconductor device structure, either by forming a trench or burying them within the semiconductor body, to reduce resistance and enhance thermal stability, allowing for improved electrical conductivity and flexibility in high-temperature processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional materials are used for contacts and wiring in semiconductor bulk, then manufacturing process is simpler, but resistance is higher and thermal stability is poor
Solution Approach 1:
The patent employs ternary carbides and nitrides as composite materials with melting points exceeding 900°C, combining high thermal stability with electrical conductivity. These materials form a composite structure within the semiconductor bulk that maintains integrity during high-temperature processing while providing low-resistance interconnections, thereby resolving the contradiction between thermal stability and manufacturing complexity.
Solution Approach 2:
The invention changes the material parameters by selecting ternary carbides and nitrides with specific properties (melting point >900°C, electrical conductivity, mechanical strength). This parameter selection enables the material to withstand high-temperature processing without degradation, achieving both thermal stability and ease of manufacture through appropriate material parameter optimization.
2Reliability
If ternary carbides and nitrides are used to reduce resistance, then electrical characteristics improve, but device structure becomes more complex
Solution Approach 1:
The patent embeds ternary carbide and nitride materials within the semiconductor bulk structure, creating a nested configuration where the conductive material is integrated into the existing device architecture. This nesting approach provides low-resistance interconnections without adding external complex structures, thereby improving electrical conductivity while maintaining structural simplicity.
Solution Approach 2:
The invention applies ternary carbides and nitrides specifically at critical locations within the semiconductor device where low resistance is needed, rather than using them throughout the entire structure. This localized application optimizes electrical conductivity in key interconnection regions while minimizing overall structural complexity and material usage.
3Reliability
If high-temperature processing is used to improve electrical characteristics, then material properties improve, but processing time increases
Solution Approach 1:
The patent incorporates ternary carbides and nitrides into the semiconductor bulk during earlier manufacturing stages, preparing the structure in advance to withstand subsequent high-temperature processing. This preliminary integration of thermally stable materials eliminates the need for lengthy thermal treatment processes, as the materials inherently resist degradation, thereby improving electrical characteristics without extending processing time.
Solution Approach 2:
The invention replaces conventional materials that require lengthy thermal processing with ternary carbides and nitrides that inherently possess high-temperature stability. This substitution eliminates the need for prolonged thermal treatment, effectively replacing a time-consuming process with a material-based solution that achieves the same electrical characteristics improvement without the time penalty.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of ternary carbides and nitrides reduces interconnection resistance, allows for more efficient use of the active semiconductor area, and eliminates the need for lengthy thermal processes, thereby improving the overall electrical characteristics and manufacturing flexibility of semiconductor devices.
Implementation Method 1
The use of ternary carbides and nitrides reduces interconnection resistance, allows for more efficient use of the active semiconductor area
Implementation Method 2
burying the at least one of the nitride and the carbide in the semiconductor body by forming a first part of the semiconductor body on the second part and on the at least one of the nitride and the carbide by epitaxial growth
Data Source
AI summary
A semiconductor device includes a trench extending into a semiconductor body from a first surface. At least one of a ternary carbide and a ternary nitride is in the trench.