Ternary Memory Error Correction Using Syndrome-Based Binary Recovery
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Solution Overview
Problem
Current systems lack effective methods for correcting single bit and multi-bit errors in binary data sequences read from ternary memory devices, which can result in incorrect data retrieval due to errors in ternary storage cells.
Innovation Solution
A circuit arrangement comprising an encoder, a data storage circuit, a syndrome generator, a decoder, and an XOR circuit is used to convert binary data to ternary data for storage and back to binary data for reading, with error correction capabilities by generating and correcting error vectors based on parity check matrices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If binary data is stored in ternary memory cells, then storage capacity is improved, but error correction capability deteriorates
Solution Approach 1:
The patent introduces an intermediary error correction circuit that mediates between the ternary memory cells and binary processing devices. This circuit includes syndrome generators that calculate error syndromes from read data and decoders that use these syndromes to correct errors, effectively bridging the reliability gap created by ternary storage while preserving its storage capacity advantages.
Solution Approach 2:
The patent applies preliminary error correction encoding when writing data to ternary memory. By pre-calculating and storing correction codes alongside the main data, the system prepares error correction capabilities in advance, allowing reliable data retrieval even though the underlying storage medium is ternary rather than binary.
2Reliability
If error correction circuits are added to ternary memory systems, then reliability is improved, but device complexity increases
Solution Approach 1:
The error correction system is segmented into distinct functional modules: syndrome generators that calculate error patterns, decoders that interpret syndromes, and XOR circuits that apply corrections. This modular segmentation allows each component to be optimized independently and simplifies the overall design and implementation of the error correction mechanism.
Solution Approach 2:
The patent employs parameter changes by using different types of codes (e.g., Hamming codes, Reed-Solomon codes) with varying redundancy levels. By adjusting code parameters such as the number of check bits and code length, the system can balance between reliability improvement and circuit complexity based on specific application requirements.
Data Source
AI summary
The invention relates to a device and a method for storing binary data in a storage device, in which the binary data is transformed to and stored as ternary data. The storage device uses memory cells capable of storing three states. The device and method furthermore are configured to identify and correct falsified ternary data when reading and outputting the data from storage device.