Test Element Group With Segmented Doped Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional Test Element Groups (TEGs) on semiconductor wafers are functional only for evaluating single circuit characteristics and become non-functional after dicing, limiting their efficiency and reliability in assessing multiple circuit characteristics of shrinking semiconductor devices with increasing density.
Innovation Solution
A semiconductor structure with specific doped and heavily doped regions, including a substrate, deep well, source/drain region, and projections, designed to test multiple circuit characteristics by applying biases through conductive pads, allowing for accurate resistance and junction leakage measurements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional TEGs are formed on scribe lines, then circuit characteristics can be evaluated, but the TEGs become non-functional after dicing and cannot assess multiple circuit characteristics
Solution Approach 1:
The TEG structure is divided into multiple independent measurement paths with separate doped regions (first doped region, second doped region), heavily doped regions, and source/drain regions. Each segment can independently measure different circuit characteristics such as resistance and junction leakage, enabling multi-functional evaluation while maintaining functionality after dicing.
Solution Approach 2:
The TEG is designed with multiple measurement capabilities within a single structure. By incorporating different doped regions with specific conductivity types and configurations, the same TEG can evaluate multiple circuit characteristics including resistance, junction leakage, and other electrical properties, making it a universal testing structure that remains functional after dicing.
2Productivity
If the dimension of semiconductor device shrinks and density increases, then device efficiency improves, but conventional TEGs cannot meet the reliability requirements
Solution Approach 1:
The patent replaces conventional single-path mechanical testing structures with a multi-path electrical measurement system. By using multiple doped regions and measurement paths that can be electrically configured to test different characteristics, the system achieves higher reliability testing without requiring multiple separate physical test structures, thus accommodating shrunk device dimensions and increased density.
3Ease of operation
If single circuit characteristics are evaluated, then measurement simplicity is maintained, but comprehensive device assessment is limited
Solution Approach 1:
Multiple measurement capabilities are merged into a single integrated TEG structure. The first doped region, second doped region, heavily doped regions, and source/drain regions are combined in one structure that can sequentially or simultaneously measure different circuit characteristics through electrical configuration, maintaining operational simplicity while achieving comprehensive device assessment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the evaluation of multiple circuit characteristics, such as resistance and junction leakage, enhancing the reliability and efficiency of semiconductor devices by maintaining functionality post-dicing and accommodating high doping concentrations.
Implementation Method 1
The first heavily doped region has the second conductivity type disposed in a first top region of the source/drain region, in which the first conductivity type is opposite to the second conductivity type
Data Source
AI summary
The semiconductor structure includes a substrate, a deep well, a first doped region, a source/drain region, and a first heavily doped region. The substrate has a first conductivity type. The deep well has a second conductivity type disposed on the substrate. The first doped region has the first conductivity type disposed on the deep well. The source/drain region has the second conductivity type disposed on the first doped region. The first heavily doped region has the second conductivity type disposed in a first top region of the source/drain region, in which the first conductivity type is opposite to the second conductivity type.