Test Element Group Layout for Selective Fin Epitaxy

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Solution Overview

Problem

Existing methods for fabricating test element groups in semiconductor devices face challenges in efficiently forming and testing the source/drain structures for integrated circuits, leading to inadequate test reliability.

Innovation Solution

A fabricating method involving selective epitaxial growth is employed, where a masking material is used to cover certain fins, allowing gas injection only on uncovered fins, thereby forming source/drain structures exclusively in a designated test group area, enhancing the efficiency and reliability of the test process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If gas is injected onto all fins in the test area, then the source/drain structures can be formed on all fins, but the test reliability is insufficient because it cannot distinguish between functional and non-functional areas

Engineering Contradiction:
Improvetest reliabilityVSAvoidfabrication process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The test area is divided into a test group area and a masking area, with only the test group area receiving gas injection for source/drain formation. This segmentation allows selective testing of specific fin regions, improving test reliability by creating distinct functional and non-functional test zones.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the test area are given different properties: the test group area receives epitaxial growth for source/drain formation while the masking area does not. This local differentiation enables reliable distinction between functional and non-functional areas for testing purposes.

Inventive Principle:
Principle #3Local quality

2Reliability

If selective epitaxial growth is performed only on a specific area, then the test reliability is improved, but the manufacturing process becomes more complex requiring masking material deposition and removal

Engineering Contradiction:
Improvetest reliabilityVSAvoidfabrication process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Masking material is deposited on the substrate before gas injection to predefine the test group area. This preliminary action simplifies the subsequent gas injection process by pre-establishing the selective growth regions, making the overall process more controllable despite the additional masking step.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method improves the formation efficiency and reliability of electrical characteristics testing for source/drain structures by concentrating gas injection in a specific area, thereby increasing the effectiveness of the test element group's functionality.

Implementation Method 1

performing selective epitaxial growth by injecting a gas onto the plurality of fins, such that the gas is not injected onto at least some of the plurality of fins covered with the masking material, and such that the epitaxial growth does not occur on the fins covered with the masking material

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Data Source

PatentUS12581918B2Fabricating method for test element group
Publication Date: 2026.03.17 SAMSUNG ELECTRONICS CO LTD
  • US12581918B2 patent drawing
  • US12581918B2 patent drawing
  • US12581918B2 patent drawing

AI summary

A fabricating method for a test element group is provided. The fabricating method for a test element group includes fabricating test areas generated in a scribe lane area, wherein fabricating of the test areas includes forming a plurality of fins protruding in a first direction on a substrate, covering at least some of the plurality of fins with a masking material, and performing selective epitaxial growth by injecting a gas onto the plurality of fins. The gas is not injected onto the at least some of the plurality of fins that are covered with the masking material, such that the epitaxial growth does not occur on the fins covered with the masking material.