Semiconductor Test Pad Bonding Layout for Higher Pin-Out Density
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Solution Overview
Problem
As semiconductor devices continue to integrate more components into smaller areas, challenges arise in the manufacturing processes, particularly in forming reliable connections and increasing the pin-out area for active devices, which affects the integration density and efficiency of electronic components.
Innovation Solution
The formation of bond pads and vias through a bond layer over a test pad and conductive features, using etching and plating processes, allows for increased connections and a larger pin-out area, enabling improved integration density and efficiency by facilitating hybrid bonding and direct surface bonding techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but additional manufacturing problems arise that worsen process reliability
Solution Approach 1:
The patent segments the bonding process into multiple stages: forming openings in the bond layer, depositing conductive material in the openings, and planarizing the surface. This segmentation allows each step to be optimized independently, addressing manufacturing reliability issues that arise from reduced feature sizes while maintaining high integration density
Solution Approach 2:
The patent performs preliminary actions by forming a bond layer over the test pad and conductive features before creating the openings. This preliminary bonding structure is prepared in advance, allowing subsequent etching and plating processes to be performed with better control and reliability, even as feature sizes decrease
2Quantity of substance
If the pin-out area is increased to enhance connections to active devices, then connectivity is improved, but the device area increases reducing integration density
Solution Approach 1:
The patent utilizes the vertical dimension by forming a bond layer that extends over the test pad and conductive features, creating openings that penetrate through this layer. This three-dimensional approach allows multiple connections to be established within a smaller footprint area, increasing the number of connections without proportionally increasing the device area
Solution Approach 2:
The patent implements nesting by placing conductive features and test pads within the footprint of the bond layer structure. The openings formed in the bond layer are positioned to access these nested conductive elements, allowing multiple functional elements to be contained within a compact area while maintaining adequate connection points
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the number of connections to active devices, increases the pin-out area, and reduces manufacturing steps, leading to cost savings and improved surface contact, thereby addressing the integration density and efficiency challenges in semiconductor device manufacturing.
Implementation Method 1
etching the bond layer to form a first opening extending to the test pad; etching the bond layer to form a second opening extending to the second conductive feature
Implementation Method 2
forming a first bond pad and a second bond pad in the first opening and the second opening, respectively
Data Source
AI summary
A semiconductor device including a test pad contact and a method of manufacturing the semiconductor device are disclosed. In an embodiment, a semiconductor device may include a first metal feature and a second metal feature disposed in a single top metal layer over a substrate. A test pad may be formed over and electrically connected to the first metal feature. A first passivation layer may be formed over the second metal feature and the test pad and may cover top and side surfaces of the test pad. A first via may be formed penetrating the first passivation layer and contacting the test pad and a second via may be formed penetrating the first passivation layer and contacting the second metal feature.