Textured Buffer Layers for YBiPt (110) Spintronic Stacks
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing spintronic devices face challenges in achieving the desired crystal orientation of YPtBi materials, which are necessary for efficient spin Hall effect and high electrical conductivity, requiring specific buffer layers and processing conditions.
Innovation Solution
The use of textured buffer layers comprising alloys like Ta, Nb, Hf, Mo, and W, with lattice spacings of 3.15 Å to 3.32 Å, and fcc nitride alloys with 4.45 Å to 4.70 Å, along with growth templates like MgO, TiN, and RuAl, to promote YBiPt in the (110) orientation, enhancing spin Hall angle in SOT applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If specific buffer layers and processing conditions are used to achieve desired YPtBi crystal orientation, then spin Hall effect efficiency and electrical conductivity are improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent changes the lattice parameter of the buffer layer by selecting materials with specific lattice constants (3.15-3.32 Å for bcc alloys, 4.45-4.70 Å for fcc nitride alloys) to match YBiPt, thereby achieving desired crystal orientation without complex processing conditions
Solution Approach 2:
The patent introduces an intermediary buffer layer with specific crystal structures (bcc or fcc) that mediates between the substrate and YBiPt, facilitating desired (110) orientation growth through lattice matching rather than relying on complex processing conditions
2Reliability
If YPtBi materials are used in SOT applications, then high spin Hall angle is achieved, but specific buffer layers and optimal processing conditions are required
Solution Approach 1:
The patent changes the manufacturing approach by selecting buffer layer materials with specific lattice parameters that naturally promote YBiPt (110) orientation, eliminating the need for optimized processing conditions such as specific deposition temperatures or annealing schedules
Solution Approach 2:
The patent performs preliminary action by pre-configuring the buffer layer with specific crystal structures and lattice constants before YBiPt deposition, thereby pre-establishing the conditions necessary for desired orientation growth without requiring subsequent optimization steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed buffer and interlayer configurations enable high-temperature operation of spintronic devices by promoting YBiPt growth in the (110) orientation, improving spin Hall angle and electrical conductivity, suitable for magnetic sensors, logic designs, and memory cells like MRAM.
Implementation Method 1
a buffer layer comprising a textured layer comprising a bcc alloy with lattice spacing in the range of about a=3.15 Å to a=3.32 Å
Implementation Method 2
promote growth of YBiPt in the (110) orientation
Data Source
AI summary
The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and/or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.