Textured Gate Thin Film Transistor High Current
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Solution Overview
Problem
Existing Thin Film Transistor (TFT) structures face challenges in achieving high current flow for fast turn-on speeds, with increasing aspect ratio or dielectric capacitance leading to parasitic capacitance and pinhole creation.
Innovation Solution
A textured TFT configuration is introduced, featuring a textured gate electrode with corrugations that modify the transistor's geometry, increasing current flow by altering charge distribution and electric field profiles, thereby enhancing turn-on speed and mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the aspect ratio of TFTs is increased to achieve higher currents, then current flow is improved, but parasitic capacitance increases
Solution Approach 1:
The gate electrode is textured with corrugations that create local variations in surface area and electric field distribution. This local quality change increases the effective gate area and capacitance without proportionally increasing parasitic capacitance, thereby improving current flow while minimizing energy loss.
Solution Approach 2:
The gate electrode transitions from a planar two-dimensional surface to a three-dimensional corrugated structure. This dimensional change increases the effective gate area and capacitance without increasing the planar footprint, allowing higher current flow without proportional increases in parasitic capacitance.
2Power
If the channel length is reduced to increase aspect ratio and achieve higher currents, then current flow is improved, but manufacturing precision requirements increase
Solution Approach 1:
Instead of changing the channel length parameter, the invention changes the gate electrode surface area parameter through texturing. This allows increasing the effective gate area and current flow without modifying the channel length, thereby avoiding increased manufacturing precision requirements.
3Power
If the dielectric is made thin to increase dielectric capacitance and achieve higher currents, then current flow is improved, but pinholes are created in the device structure
Solution Approach 1:
The gate electrode is textured with corrugations that increase the effective gate area in three dimensions. This allows increasing the gate capacitance without reducing the dielectric thickness, thereby improving current flow while maintaining device structure integrity and avoiding pinhole formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The textured gate TFTs demonstrate faster turn-on and higher mobility, with increased current flow and leakage currents, overcoming the limitations of traditional TFT structures.
Implementation Method 1
The textured gate electrode is fabricated such that a surface is modified in its texture and/or geometry, to thereby affect the transistor current
Data Source
AI summary
A textured thin film transistor is comprised of an insulator sandwiched between a textured gate electrode and a semi-conductor. A source electrode and drain electrode are fabricated on a surface of the semi-conductor. The textured gate electrode is fabricated such that a surface is modified in its texture and/or geometry, such modifications affecting the transistor current.