Textured Semiconductor Layers for Laser Dopant Activation
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Solution Overview
Problem
Existing semiconductor devices face challenges in efficiently absorbing laser beams for activating semiconductor materials, particularly in three-dimensional memory devices with vertical NAND strings, which affect the performance and efficiency of memory operations.
Innovation Solution
The implementation of laser beam absorption enhancement structures through textured patterns in semiconductor layers, achieved by forming alternating stacks of insulating and conductive layers, and irradiating a laser beam on unactivated semiconductor layers to convert them into semiconductor source layers, enhancing absorption efficiency through optical effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a planar semiconductor layer is used for laser beam irradiation, then the device structure is simple, but the laser beam absorption efficiency is low
Solution Approach 1:
The patent applies surface texturing to create curved and irregular surfaces on the semiconductor layer instead of a flat planar surface. This curvature increases the optical path length and multiple reflections of the laser beam within the semiconductor material, thereby enhancing absorption efficiency while maintaining a relatively simple fabrication process
Solution Approach 2:
The invention transitions from a two-dimensional planar surface to a three-dimensional textured surface by creating nanoscale pits, protrusions, or porous structures. This dimensional change increases the surface area and creates multiple interfaces for laser beam interaction, significantly improving absorption without adding complex device architecture
2Productivity
If the semiconductor layer is irradiated with laser beam to activate dopants, then the activation process is efficient, but the energy distribution is non-uniform
Solution Approach 1:
The patent creates non-uniform local structures (textured regions with varying depths, densities, or compositions) across the semiconductor layer. These local variations are strategically designed to distribute the laser energy more uniformly across the entire layer, preventing hot spots and ensuring consistent dopant activation throughout the material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The textured patterns significantly improve the laser beam absorption efficiency, leading to enhanced activation of semiconductor materials and improved performance in three-dimensional memory devices.
Implementation Method 1
The textured pattern enhances an absorption efficiency of the laser beam through at least one optical effect
Implementation Method 2
The textured pattern enhances an absorption efficiency of the laser beam through at least one optical effect
Data Source
AI summary
A textured pattern is formed over a semiconductor structure. The textured pattern may comprise a semiconductor material including unactivated dopants, or may comprise a dielectric material overlying a semiconductor material portion including unactivated dopants. A laser anneal process can be performed by irradiating a laser beam on the textured pattern. The textured pattern enhances an absorption efficiency of the laser beam through at least one optical effect.